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在钴上生长的多层石墨烯中的巨磁电阻开关。

Giant magnetoresistance switching in multilayer graphene grown on cobalt.

机构信息

Department of Electrical and Computer Engineering, University of Alberta, Edmonton, AB T6G 1H9, Canada.

出版信息

Nanotechnology. 2018 Sep 21;29(38):385202. doi: 10.1088/1361-6528/aacfd8. Epub 2018 Jun 28.

Abstract

Magnetic multilayer devices, showing large magnetoresistance (MR) effects, have revolutionized magnetic sensing and data storage sectors over the last few decades. Two-dimensional van der Waals layered materials are relatively new entrants in this area, and these materials can give rise to large MR effects with diverse physical origins. Here we report observation of giant MR switching (∼10 orders of magnitude) in multilayered graphene grown on cobalt (Co) substrates, which persists even at room temperature. The origin of this effect is linked with weak interlayer coupling of the graphene stacks, which gives rise to an 'interlayer MR' effect. This effect is found to be robust against some degree of inhomogeneity in the graphene stack, making it an attractive platform for the emerging area of flexible magnetic sensorics.

摘要

磁性多层器件具有较大的磁电阻(MR)效应,在过去几十年中彻底改变了磁传感和数据存储领域。二维范德华层状材料是该领域的新进入者,这些材料可以通过多种物理起源产生较大的 MR 效应。在此,我们报告了在钴(Co)衬底上生长的多层石墨烯中观察到的巨大 MR 开关(约 10 个数量级),即使在室温下也能保持这种现象。这种效应与石墨烯堆叠的弱层间耦合有关,从而产生了“层间 MR”效应。该效应被发现对石墨烯堆叠的一定程度的非均匀性具有鲁棒性,这使其成为新兴的柔性磁传感器领域的一个有吸引力的平台。

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