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用于电致变色器件的纳米晶三氧化钼掺杂三氧化钨的简易溶液合成法

Facile Solution Synthesis of Tungsten Trioxide Doped with Nanocrystalline Molybdenum Trioxide for Electrochromic Devices.

作者信息

Hasani Amirhossein, Le Quyet Van, Nguyen Thang Phan, Choi Kyoung Soon, Sohn Woonbae, Kim Jang-Kyo, Jang Ho Won, Kim Soo Young

机构信息

School of Chemical Engineering and Materials Science, Integrative research center for two-dimensional functional materials, Institute of Interdisciplinary Convergence Research, Chung-Ang University, 84 Heukseok-ro, Dongjak-gu, Seoul, 06974, Republic of Korea.

Advanced Nano-Surface Research Group, Korea Basic Science Institute (KBSI), 169-148, Gwahak-ro, Yuseong-gu, Daejeon, 34133, Republic of Korea.

出版信息

Sci Rep. 2017 Oct 16;7(1):13258. doi: 10.1038/s41598-017-13341-z.

DOI:10.1038/s41598-017-13341-z
PMID:29038445
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5643310/
Abstract

A facile, highly efficient approach to obtain molybdenum trioxide (MoO)-doped tungsten trioxide (WO) is reported. An annealing process was used to transform ammonium tetrathiotungstate [(NH)WS] to WO in the presence of oxygen. Ammonium tetrathiomolybdate [(NH)MoS] was used as a dopant to improve the film for use in an electrochromic (EC) cell. (NH)MoS at different concentrations (10, 20, 30, and 40 mM) was added to the (NH)WS precursor by sonication and the samples were annealed at 500 °C in air. Raman, X-ray diffraction, and X-ray photoelectron spectroscopy measurements confirmed that the (NH)WS precursor decomposed to WO and the (NH)MoS-(NH)WS precursor was transformed to MoO-doped WO after annealing at 500 °C. It is shown that the MoO-doped WO film is more uniform and porous than pure WO, confirming the doping quality and the privileges of the proposed method. The optimal MoO-doped WO used as an EC layer exhibited a high coloration efficiency of 128.1 cm/C, which is larger than that of pure WO (74.5 cm/C). Therefore, MoO-doped WO synthesized by the reported method is a promising candidate for high-efficiency and low-cost smart windows.

摘要

报道了一种简便、高效的制备三氧化钼(MoO)掺杂三氧化钨(WO)的方法。采用退火工艺在氧气存在下将四硫代钨酸铵[(NH)WS]转化为WO。四硫代钼酸铵[(NH)MoS]用作掺杂剂以改善用于电致变色(EC)电池的薄膜。通过超声处理将不同浓度(10、20、30和40 mM)的(NH)MoS添加到(NH)WS前驱体中,并将样品在空气中500℃退火。拉曼光谱、X射线衍射和X射线光电子能谱测量证实,(NH)WS前驱体分解为WO,并且(NH)MoS-(NH)WS前驱体在500℃退火后转化为MoO掺杂的WO。结果表明,MoO掺杂的WO薄膜比纯WO更均匀且多孔,证实了掺杂质量和所提出方法的优势。用作EC层的最佳MoO掺杂WO表现出128.1 cm/C的高着色效率,大于纯WO的着色效率(74.5 cm/C)。因此,通过所报道方法合成的MoO掺杂WO是用于高效和低成本智能窗的有前途的候选材料。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5f72/5643310/03a1529107f6/41598_2017_13341_Fig7_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5f72/5643310/5b6aafde31dd/41598_2017_13341_Fig1_HTML.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5f72/5643310/03a1529107f6/41598_2017_13341_Fig7_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5f72/5643310/5b6aafde31dd/41598_2017_13341_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5f72/5643310/85b517621ef6/41598_2017_13341_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5f72/5643310/69f30c274e87/41598_2017_13341_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5f72/5643310/ff449963097a/41598_2017_13341_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5f72/5643310/b28c08c7e30e/41598_2017_13341_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5f72/5643310/6a3abb08f21e/41598_2017_13341_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5f72/5643310/03a1529107f6/41598_2017_13341_Fig7_HTML.jpg

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