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三氧化钨掺杂硒化镉量子点用于智能窗户。

Tungsten Trioxide Doped with CdSe Quantum Dots for Smart Windows.

机构信息

School of Chemical Engineering and Materials Science, Integrative Research Center for Two-Dimensional Functional Materials, Institute of Interdisciplinary Convergence Research , Chung-Ang University , 84 Heukseok-ro , Dongjak-gu, Seoul 06974 , Republic of Korea.

Institute of Research and Development , Duy Tan University , Da Nang 550000 , Vietnam.

出版信息

ACS Appl Mater Interfaces. 2018 Dec 19;10(50):43785-43791. doi: 10.1021/acsami.8b15183. Epub 2018 Dec 5.

DOI:10.1021/acsami.8b15183
PMID:30474953
Abstract

Nanocrystal quantum dots (QDs) provide tunable optoelectronic properties on the basis of their dimension. CdSe QDs, which are size-dependent colloidal nanocrystals, are used for efficient electrochromic devices owing to their unique properties in modulating quantum confinement, resulting in enhanced electron insertion during the electrochromic process. Incorporating a well-known metal oxide electrochromic material such as WO into CdSe QDs enhances the redox process. Herein, we propose a facile method for producing and optimizing CdSe QDs doped in WO. The fabrication of the electrochromic film involves a solution and annealing process. Moreover, the effect of the QD size to optimize the electrochromic layer is studied. As a result, the coloration efficiency of WO and optimized CdSe QD-WO are obtained as 68.6 and 112.3 cm/C, respectively. Thus, size-tunable nanocrystal QDs combined with a metal oxide yield high-performance electrochromic devices and are promising candidates for producing smart windows.

摘要

纳米晶量子点 (QDs) 基于其尺寸提供可调谐的光电性能。CdSe QDs 是尺寸依赖的胶体纳米晶体,由于其在调节量子限制方面的独特性质,可用于高效电致变色器件,从而在电致变色过程中增强电子插入。将众所周知的金属氧化物电致变色材料如 WO 掺入 CdSe QDs 中可以增强氧化还原过程。在此,我们提出了一种简便的方法来制备和优化掺杂 WO 的 CdSe QDs。电致变色膜的制备涉及溶液和退火过程。此外,还研究了 QD 尺寸对优化电致变色层的影响。结果,WO 和优化后的 CdSe QD-WO 的着色效率分别为 68.6 和 112.3 cm/C。因此,尺寸可调的纳米晶 QDs 与金属氧化物相结合,可产生高性能的电致变色器件,是制造智能窗的有前途的候选材料。

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