用于硅基锗和绝缘体上硅锗中红外波导平台的高效5.2微米波长光纤到芯片光栅耦合器。

Efficient 5.2 µm wavelength fiber-to-chip grating couplers for the Ge-on-Si and Ge-on-SOI mid-infrared waveguide platform.

作者信息

Radosavljevic Sanja, Kuyken Bart, Roelkens Gunther

出版信息

Opt Express. 2017 Aug 7;25(16):19034-19042. doi: 10.1364/OE.25.019034.

DOI:10.1364/OE.25.019034

Abstract

We present the design, fabrication and characterization of efficient fiber-to-chip grating couplers on a Germanium-on-Silicon (Ge-on-Si) and Germanium-on-silicon-on-insulator (Ge-on-SOI) platform in the 5 µm wavelength range. The best grating couplers on Ge-on-Si and Ge-on-SOI have simulated coupling efficiencies of -4 dB (40%) with a 3 dB bandwidth of 180 nm and -1.5 dB (70%) with a 3 dB bandwidth of 200 nm, respectively. Experimentally, we show a maximum efficiency of -5 dB (32%) and a 3 dB bandwidth of 100 nm for Ge-on-Si grating couplers, and a -4 dB (40%) efficiency with a 3 dB bandwidth of 180 nm for Ge-on-SOI couplers.

摘要

我们展示了在5微米波长范围内，基于硅基锗（Ge-on-Si）和绝缘体上硅基锗（Ge-on-SOI）平台的高效光纤到芯片光栅耦合器的设计、制造和特性。在Ge-on-Si和Ge-on-SOI上的最佳光栅耦合器，模拟耦合效率分别为-4 dB（40%），3 dB带宽为180纳米；以及-1.5 dB（70%），3 dB带宽为200纳米。实验上，我们展示了Ge-on-Si光栅耦合器的最大效率为-5 dB（32%），3 dB带宽为100纳米；以及Ge-on-SOI耦合器的效率为-4 dB（40%），3 dB带宽为180纳米。