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用于1.3μm数据通信波长波段的单次蚀刻亚波长工程化光纤-芯片光栅耦合器

Single-etch subwavelength engineered fiber-chip grating couplers for 1.3 µm datacom wavelength band.

作者信息

Benedikovic Daniel, Alonso-Ramos Carlos, Cheben Pavel, Schmid Jens H, Wang Shurui, Halir Robert, Ortega-Moñux Alejandro, Xu Dan-Xia, Vivien Laurent, Lapointe Jean, Janz Siegfried, Dado Milan

出版信息

Opt Express. 2016 Jun 13;24(12):12893-904. doi: 10.1364/OE.24.012893.

DOI:10.1364/OE.24.012893
PMID:27410309
Abstract

We report, for the first time, on the design and experimental demonstration of fiber-chip surface grating couplers based on subwavelength grating engineered nanostructure operating in the low fiber chromatic dispersion window (around 1.3 μm wavelengths), which is of great interest for short-reach data communication applications. Our coupler designs meet the minimum feature size requirements of large-volume deep-ultraviolet stepper lithography processes. The fiber-chip couplers are implemented in a standard 220-nm-thick silicon-on-insulator (SOI) platform and are fabricated by using a single etch process. Several types of couplers are presented, specifically the uniform, the apodized, and the focusing designs. The measured peak coupling efficiency is -2.5 dB (56%) near the central wavelength of 1.3 μm. In addition, by utilizing the technique of the backside substrate metallization underneath the grating couplers, the coupling efficiency of up to -0.5 dB (89%) is predicted by Finite Difference Time Domain (FDTD) calculations.

摘要

我们首次报道了基于亚波长光栅工程纳米结构的光纤-芯片表面光栅耦合器的设计与实验演示,该耦合器工作在低光纤色散窗口(约1.3μm波长),这对于短距离数据通信应用具有重要意义。我们的耦合器设计满足了大尺寸深紫外步进光刻工艺的最小特征尺寸要求。光纤-芯片耦合器在标准的220nm厚绝缘体上硅(SOI)平台上实现,并通过单次蚀刻工艺制造。展示了几种类型的耦合器,特别是均匀型、变迹型和聚焦型设计。在1.3μm中心波长附近测得的峰值耦合效率为-2.5dB(56%)。此外,通过利用光栅耦合器下方背面衬底金属化技术,有限时域差分(FDTD)计算预测耦合效率高达-0.5dB(89%)。

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