Weichelt T, Bourgin Y, Zeitner U D
Opt Express. 2017 Sep 4;25(18):20983-20992. doi: 10.1364/OE.25.020983.
Mask aligner lithography is a well-established back-end fabrication process in microlithography. Within the last few years, resolution enhancement techniques have been transferred and adapted from projection lithography to further develop mask aligner lithography, especially concerning achievable resolution. Nonetheless, current technology using a mercury vapor lamp as a light source has reached its limits, e.g. for high-resolution pattering. Within this paper, we present the extension of the existing mask aligner illumination system by replacing the mercury vapor lamp with a solid-state laser. Full-field mask aligner lithography is guaranteed by a rotating diffuser expanding the laser beam and minimizing undesired speckle effects. An additional integrated galvanometer scanner allows a flexible choice of arbitrary angular spectrum distributions of the photomask illumination. We show versatile results like simple binary patterns of squares and triangles, as well as a more complex lateral shape like a blazed grating.
掩膜对准光刻是微光刻中一种成熟的后端制造工艺。在过去几年中,分辨率增强技术已从投影光刻转移并应用于进一步发展掩膜对准光刻,特别是在可实现的分辨率方面。尽管如此,当前使用汞蒸气灯作为光源的技术已经达到了其极限,例如在高分辨率图案化方面。在本文中,我们展示了通过用固态激光器替换汞蒸气灯来扩展现有的掩膜对准照明系统。通过旋转漫射器扩展激光束并最小化不期望的散斑效应,确保了全场掩膜对准光刻。一个额外的集成振镜扫描仪允许灵活选择光掩膜照明的任意角谱分布。我们展示了多种结果,如正方形和三角形的简单二元图案,以及更复杂的横向形状,如闪耀光栅。