• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

胶体半导体纳米晶体的尺寸相关带隙和粒径分布。

Size-dependent bandgap and particle size distribution of colloidal semiconductor nanocrystals.

机构信息

Departamento de Física, CCE, Universidade Federal de Viçosa, 36570-900 Viçosa, Minas Gerais, Brazil.

Departamento de Ciências Naturais, Universidade Federal de São João Del Rei, Campus Dom Bosco, 36301-160 São João del-Rei, Minas Gerais, Brazil.

出版信息

J Chem Phys. 2017 Oct 21;147(15):154102. doi: 10.1063/1.4999093.

DOI:10.1063/1.4999093
PMID:29055348
Abstract

A new analytical expression for the size-dependent bandgap of colloidal semiconductor nanocrystals is proposed within the framework of the finite-depth square-well effective mass approximation in order to provide a quantitative description of the quantum confinement effect. This allows one to convert optical spectroscopic data (photoluminescence spectrum and absorbance edge) into accurate estimates for the particle size distributions of colloidal systems even if the traditional effective mass model is expected to fail, which occurs typically for very small particles belonging to the so-called strong confinement limit. By applying the reported theoretical methodologies to CdTe nanocrystals synthesized through wet chemical routes, size distributions are inferred and compared directly to those obtained from atomic force microscopy and transmission electron microscopy. This analysis can be used as a complementary tool for the characterization of nanocrystal samples of many other systems such as the II-VI and III-V semiconductor materials.

摘要

提出了一种新的分析表达式,用于胶体半导体纳米晶体的尺寸相关能隙,该表达式是在有限深度方阱有效质量近似的框架内提出的,以便对量子限制效应进行定量描述。这使得人们可以将光学光谱数据(光致发光光谱和吸收边)转换为胶体系统的准确粒径分布估计值,即使传统的有效质量模型预计会失效,这种情况通常发生在属于所谓的强限制限域的非常小的粒子中。通过将报道的理论方法应用于通过湿化学途径合成的 CdTe 纳米晶体,推断出尺寸分布,并直接与原子力显微镜和透射电子显微镜获得的尺寸分布进行比较。这种分析可作为许多其他系统(如 II-VI 和 III-V 半导体材料)的纳米晶体样品的表征的补充工具。

相似文献

1
Size-dependent bandgap and particle size distribution of colloidal semiconductor nanocrystals.胶体半导体纳米晶体的尺寸相关带隙和粒径分布。
J Chem Phys. 2017 Oct 21;147(15):154102. doi: 10.1063/1.4999093.
2
Dynamic distribution of growth rates within the ensembles of colloidal II-VI and III-V semiconductor nanocrystals as a factor governing their photoluminescence efficiency.胶体II-VI族和III-V族半导体纳米晶体集合体内生长速率的动态分布作为决定其光致发光效率的一个因素。
J Am Chem Soc. 2002 May 22;124(20):5782-90. doi: 10.1021/ja0123599.
3
Size and distribution: a comparison of XRD, SAXS and SANS study of II-VI semiconductor nanocrystals.尺寸与分布:II-VI族半导体纳米晶体的X射线衍射、小角X射线散射和小角中子散射研究比较
J Nanosci Nanotechnol. 2008 Mar;8(3):1221-7. doi: 10.1166/jnn.2008.370.
4
Scanning probe microscopy and spectroscopy of colloidal semiconductor nanocrystals and assembled structures.胶体半导体纳米晶及组装结构的扫描探针显微镜和光谱学
Chem Rev. 2016 Sep 28;116(18):11181-219. doi: 10.1021/acs.chemrev.5b00678. Epub 2016 Feb 22.
5
Composition-tunable alloyed semiconductor nanocrystals.可调控组成的合金半导体纳米晶。
Acc Chem Res. 2010 May 18;43(5):621-30. doi: 10.1021/ar900242r.
6
Spin-polarizable excitonic luminescence in colloidal Mn2+-doped CdSe quantum dots.胶体掺杂锰离子的硒化镉量子点中的自旋极化激子发光
Nano Lett. 2008 Apr;8(4):1197-201. doi: 10.1021/nl080195p. Epub 2008 Mar 11.
7
Theoretical and experimental studies of stressed nanoparticles of II-VI semiconductors.关于 II-VI 族半导体受应力纳米粒子的理论和实验研究。
J Chem Phys. 2010 Jan 7;132(1):014107. doi: 10.1063/1.3280074.
8
Electronic doping and redox-potential tuning in colloidal semiconductor nanocrystals.胶体半导体纳米晶中的电子掺杂和氧化还原电势调谐。
Acc Chem Res. 2015 Jul 21;48(7):1929-37. doi: 10.1021/acs.accounts.5b00181. Epub 2015 Jun 29.
9
Near-infrared photoluminescence enhancement in Ge/CdS and Ge/ZnS Core/shell nanocrystals: utilizing IV/II-VI semiconductor epitaxy.Ge/CdS 和 Ge/ZnS 核/壳纳米晶体中的近红外光致发光增强:利用 IV/II-VI 半导体外延。
ACS Nano. 2014 Aug 26;8(8):8334-43. doi: 10.1021/nn502792m. Epub 2014 Jul 17.
10
Tailoring Optical Properties of Luminescent Semiconducting Nanocrystals through Hydrostatic, Anisotropic Static, and Dynamic Pressures.通过流体静压力、各向异性静压力和动态压力调控发光半导体纳米晶体的光学性质
Angew Chem Int Ed Engl. 2021 Apr 26;60(18):9772-9788. doi: 10.1002/anie.202008395. Epub 2021 Jan 8.

引用本文的文献

1
Real-time monitoring of CdTe quantum dots growth in aqueous solution.水溶液中碲化镉量子点生长的实时监测
Sci Rep. 2024 Apr 3;14(1):7884. doi: 10.1038/s41598-024-57810-8.
2
Semiconductor Quantum Dots as Target Analytes: Properties, Surface Chemistry and Detection.作为目标分析物的半导体量子点:性质、表面化学与检测
Nanomaterials (Basel). 2022 Jul 21;12(14):2501. doi: 10.3390/nano12142501.
3
Application of Response Surface Methodology for Optimization of Nanosized Zinc Oxide Synthesis Conditions by Electrospinning Technique.
响应面法在静电纺丝技术优化纳米氧化锌合成条件中的应用
Nanomaterials (Basel). 2022 May 18;12(10):1733. doi: 10.3390/nano12101733.