Oak Ridge National Laboratory , 1 Bethel Valley Road, Oak Ridge, Tennessee 37831, United States.
University of California at Berkeley , 210 Hearst Memorial Mining Building, Berkeley, California 94720, United States.
ACS Appl Mater Interfaces. 2017 Nov 15;9(45):39736-39746. doi: 10.1021/acsami.7b10747. Epub 2017 Oct 31.
Ferroelectric materials are used in many applications of modern technologies including information storage, transducers, sensors, tunable capacitors, and other novel device concepts. In many of these applications, the ferroelectric properties, such as switching voltages, piezoelectric constants, or stability of nanodomains, are crucial. For any application, even for material characterization, the material itself needs to be interfaced with electrodes. On the basis of the structural, chemical, and electronic properties of the interfaces, the measured material properties can be determined by the interface. This is also true for surfaces. However, the importance of interfaces and surfaces and their effect on experiments are often neglected, which results in many dramatically different experimental results for nominally identical samples. Therefore, it is crucial to understand the role of the interface and surface properties on internal bias fields and the domain switching process. Here, the nanoscale ferroelectric switching process and the stability of nanodomains for Pb(Zr,Ti)O thin films are investigated by using scanning probe microscopy. Interface and surface properties are modulated through the selection/redesign of electrode materials as well as tuning the surface-near oxygen vacancies, which both can result in changes of the electric fields acting across the sample, and consequently this controls the measured ferroelectric and domain retention properties. By understanding the role of surfaces and interfaces, ferroelectric properties can be tuned to eliminate the problem of asymmetric domain stability by combining the effects of different electrode materials. This study forms an important step toward integrating ferroelectric materials in electronic devices.
铁电材料在现代技术的许多应用中都有使用,包括信息存储、换能器、传感器、可调电容器和其他新型器件概念。在许多这些应用中,铁电性能,如开关电压、压电常数或纳米畴的稳定性,都是至关重要的。对于任何应用,即使是材料特性分析,都需要将材料与电极进行接口。基于界面的结构、化学和电子特性,可以通过界面来确定测量的材料性能。这对表面也是如此。然而,界面和表面的重要性及其对实验的影响经常被忽视,这导致对于名义上相同的样品,实验结果会有很大的差异。因此,了解界面和表面性质对内建偏置场和畴反转过程的影响是至关重要的。在这里,通过扫描探针显微镜研究了 Pb(Zr,Ti)O 薄膜的纳米级铁电开关过程和纳米畴的稳定性。通过选择/重新设计电极材料以及调整表面附近的氧空位来调节界面和表面性质,这两者都可以导致作用在样品上的电场发生变化,从而控制测量的铁电和畴保持性能。通过了解表面和界面的作用,可以通过结合不同电极材料的效果来调整铁电性能,以消除不对称畴稳定性的问题。这项研究是将铁电材料集成到电子设备中的重要一步。