Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Beichen District, Tianjin 300401, P.R. China.
Nanoscale. 2017 Nov 9;9(43):16836-16842. doi: 10.1039/c7nr05370c.
Quantum dot (QD) silicone nanocomposites are promising luminescent materials for developing high performance light-emitting diodes (LEDs). However, their practical application still faces a critical issue of strong fluorescence quenching in commercial silicone, which is normally induced by the agglomeration of QDs and the impurities such as a Pt-catalyst and oxygen in the silicone matrices. This article reports the development of zinc-terminated polydimethylsiloxane (Zn-PDMS) to passivate CdSe/CdS/ZnS QDs via an in situ approach. The Zn-PDMS passivation protects the QDs from reacting with impurities and provides the mono-dispersion of QDs in silicone resin, leading to over 80% quantum efficiency as well as effective anti-quenching properties for the QD-silicone nanocomposite under an ambient atmosphere. A high performance warm-white LED prototype with direct on-chip packaging using the as-prepared QDs is developed.
量子点（QD）硅纳米复合材料是开发高性能发光二极管（LED）的有前途的发光材料。然而，它们的实际应用仍然面临着一个关键问题，即在商业硅酮中，QD 会发生强烈的荧光猝灭，这通常是由 QD 的聚集以及硅酮基质中的杂质（如 Pt 催化剂和氧）引起的。本文报道了通过原位方法用锌封端的聚二甲基硅氧烷（Zn-PDMS）来钝化 CdSe/CdS/ZnS QD。Zn-PDMS 的钝化作用可以防止 QD 与杂质发生反应，并在硅树脂中提供 QD 的单分散性，从而使 QD-硅酮纳米复合材料在环境气氛下的量子效率超过 80%，并具有有效的抗猝灭性能。使用所制备的 QD 直接进行片上封装，开发出了一种高性能暖白光 LED 原型。
