Xie Yangyang, Geng Chong, Gao Yiqun, Liu Jay Guoxu, Zhang Zi-Hui, Zhang Yonghui, Xu Shu, Bi Wengang
Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Beichen District, Tianjin 300401, China.
SHINEON Co., LTD., Building 3, No. 58 Jinghai Road, BDA, Beijing 100176, China.
Materials (Basel). 2017 Oct 27;10(11):1242. doi: 10.3390/ma10111242.
In this report, to tackle the thermal fluorescent quenching issue of II-VI semiconductor quantum dots (QDs), which hinders their on-chip packaging application to light-emitting diodes (LEDs), a QD-ZnS nanosheet inorganic assembly monolith (QD-ZnS NIAM) is developed through chemisorption of QDs on the surface of two-dimensional (2D) ZnS nanosheets and subsequent assembly of the nanosheets into a compact inorganic monolith. The QD-ZnS NIAM could reduce the thermal fluorescent quenching of QDs effectively, possibly due to fewer thermally induced permanent trap states and decreased Förster resonance energy transfer (FRET) among QDs when compared with those in a reference QD composite thin film. We have demonstrated that the QD-ZnS NIAM enables QDs to be directly packaged on-chip in LEDs with over 90% of their initial luminance being retained at above 85 °C, showing advantage in LED application in comparison with conventional QD composite film.
在本报告中，为了解决II-VI族半导体量子点（QDs）的热荧光猝灭问题（该问题阻碍了它们在发光二极管（LED）芯片封装中的应用），通过量子点在二维（2D）硫化锌纳米片表面的化学吸附以及随后将纳米片组装成致密的无机整体，开发了一种量子点-硫化锌纳米片无机组装整体（QD-ZnS NIAM）。与参考量子点复合薄膜相比，QD-ZnS NIAM可以有效降低量子点的热荧光猝灭，这可能是由于热诱导的永久陷阱态较少以及量子点之间的Förster共振能量转移（FRET）减少。我们已经证明，QD-ZnS NIAM使量子点能够直接在芯片上封装到LED中，在高于85°C的温度下仍能保留其初始亮度的90%以上，与传统量子点复合薄膜相比，在LED应用中显示出优势。
