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半导体量子点敏化彩虹光电阴极用于有效光电化学制氢。

Semiconductor quantum dot-sensitized rainbow photocathode for effective photoelectrochemical hydrogen generation.

机构信息

Department of Chemistry, University of Rochester, Rochester, NY 14627.

Department of Physics and Astronomy, University of Rochester, Rochester, NY 14627.

出版信息

Proc Natl Acad Sci U S A. 2017 Oct 24;114(43):11297-11302. doi: 10.1073/pnas.1712325114. Epub 2017 Oct 9.

DOI:10.1073/pnas.1712325114
PMID:29073047
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5664547/
Abstract

The present study reports the fabrication of CdSe quantum dot (QD)-sensitized photocathodes on NiO-coated indium tin oxide (ITO) electrodes and their H-generating ability upon light irradiation. A well-established spin-coating method was used to deposit CdSe QD stock solution onto the surface of NiO/ITO electrodes, thereby leading to the construction of various CdSe QD-sensitized photocathodes. The present report includes the construction of rainbow photocathodes by spin-coating different-sized QDs in a sequentially layered manner, thereby creating an energetically favorable gradient for charge separation. The resulting rainbow photocathodes with forward energetic gradient for charge separation and subsequent electron transfer to a solution-based hydrogen-evolving catalyst (HEC) exhibit good light-harvesting ability and enhanced photoresponses compared with the reverse rainbow photocathodes under white LED light illumination. Under minimally optimized conditions, a photocurrent density of as high as 115 μA⋅cm and a Faradaic efficiency of 99.5% are achieved, which is among the most effective QD-based photocathode water-splitting systems.

摘要

本研究报告了在 NiO 涂覆的氧化铟锡(ITO)电极上制备 CdSe 量子点(QD)敏化光阴极及其在光照下产生 H 的能力。采用成熟的旋涂法将 CdSe QD 储备溶液沉积在 NiO/ITO 电极表面,从而构建了各种 CdSe QD 敏化光阴极。本报告包括通过顺序层积不同尺寸的 QD 来构建彩虹光阴极,从而为电荷分离创造了有利的能量梯度。与在白色 LED 光照射下的反向彩虹光阴极相比,具有正向能量梯度的分离电荷和随后向基于溶液的析氢催化剂(HEC)转移电子的彩虹光阴极具有良好的光捕获能力和增强的光响应。在最小优化条件下,实现了高达 115 μA·cm 的光电流密度和 99.5%的法拉第效率,这是最有效的基于 QD 的光解水系统之一。

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