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真空沉积有机金属卤化物钙钛矿发光器件。

Vacuum-Deposited Organometallic Halide Perovskite Light-Emitting Devices.

机构信息

Department of Materials Science and Engineering, National Tsing Hua University , No. 101, Section 2, Kuang-Fu Road, Hsinchu 300, Taiwan.

出版信息

ACS Appl Mater Interfaces. 2017 Nov 22;9(46):40516-40522. doi: 10.1021/acsami.7b12805. Epub 2017 Nov 7.

DOI:10.1021/acsami.7b12805
PMID:29076335
Abstract

In this work, a sequential vacuum deposition process of bright, highly crystalline, and smooth methylammonium lead bromide and phenethylammonium lead bromide perovskite thin films are investigated and the first vacuum-deposited organometallic halide perovskite light-emitting devices (PeLEDs) are demonstrated. Exceptionally low refractive indices and extinction coefficients in the emission wavelength range are obtained for these films, which contributed to a high light out-coupling efficiency of the PeLEDs. By utilizing these perovskite thin films as emission layers, the vacuum-deposited PeLEDs exhibit a very narrow saturated green electroluminescence at 531 nm, with a spectral full width at half-maximum bandwidth of 18.6 nm, a promising brightness of up to 6200 cd/m, a current efficiency of 1.3 cd/A, and an external quantum efficiency of 0.36%.

摘要

在这项工作中,我们研究了亮、高结晶度、光滑的甲脒铅溴和苯乙基铵铅溴钙钛矿薄膜的顺序真空沉积工艺,并首次展示了真空沉积的有机金属卤化物钙钛矿发光器件(PeLED)。这些薄膜在发射波长范围内具有极低的折射率和消光系数,这有助于提高 PeLED 的光取出效率。通过利用这些钙钛矿薄膜作为发射层,真空沉积的 PeLED 呈现出非常窄的饱和绿光电致发光,在 531nm 处的光谱全宽半最大值带宽为 18.6nm,亮度高达 6200cd/m²,电流效率为 1.3cd/A,外量子效率为 0.36%。

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引用本文的文献

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Focus on performance of perovskite light-emitting diodes.关注钙钛矿发光二极管的性能。
Front Optoelectron. 2020 Sep;13(3):235-245. doi: 10.1007/s12200-020-1042-y. Epub 2020 Jun 11.
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High-Performance Perovskite-Based Light-Emitting Diodes from the Conversion of Amorphous Spin-Coated Lead Bromide with Phenethylamine Doping.
基于用苯乙胺掺杂的非晶旋涂溴化铅转化的高性能钙钛矿基发光二极管。
ACS Omega. 2020 Apr 10;5(15):8697-8706. doi: 10.1021/acsomega.0c00191. eCollection 2020 Apr 21.