SKKU Advanced Institute of Nanotechnology (SAINT), School of Chemical Engineering, Sungkyunkwan University , Suwon 16419, Republic of Korea.
Department of Science Education, Ewha Womans University , Seoul 03760, Republic of Korea.
ACS Appl Mater Interfaces. 2017 Nov 22;9(46):40503-40515. doi: 10.1021/acsami.7b12435. Epub 2017 Nov 9.
We report high-performance top-gate bottom-contact flexible polymer field-effect transistors (FETs) fabricated by flow-coating diketopyrrolopyrrole (DPP)-based and naphthalene diimide (NDI)-based polymers (P(DPP2DT-T2), P(DPP2DT-TT), P(DPP2DT-DTT), P(NDI2OD-T2), P(NDI2OD-F2T2), and P(NDI2OD-Se2)) as semiconducting channel materials. All of the polymers displayed good FET characteristics with on/off current ratios exceeding 10. The highest hole mobility of 1.51 cm V s and the highest electron mobility of 0.85 cm V s were obtained from the P(DPP2DT-T2) and P(NDI2OD-Se2) polymer FETs, respectively. The impacts of the polymer structures on the FET performance are well-explained by the interplay between the crystallinity, the tendency of the polymer backbone to adopt an edge-on orientation, and the interconnectivity of polymer fibrils in the film state. Additionally, we demonstrated that all of the flexible polymer-based FETs were highly resistant to tensile stress, with negligible changes in their carrier mobilities and on/off ratios after a bending test. Conclusively, these high-performance, flexible, and durable FETs demonstrate the potential of semiconducting conjugated polymers for use in flexible electronic applications.
我们报告了通过流涂二酮吡咯并吡咯（DPP）基和萘二酰亚胺（NDI）基聚合物（P（DPP2DT-T2）、P（DPP2DT-TT）、P（DPP2DT-DTT）、P（NDI2OD-T2）、P（NDI2OD-F2T2）和 P（NDI2OD-Se2））作为半导体沟道材料制造的高性能顶栅底接触柔性聚合物场效应晶体管（FET）。所有聚合物都表现出良好的 FET 特性，导通/关断电流比超过 10。从 P（DPP2DT-T2）和 P（NDI2OD-Se2）聚合物 FET 中分别获得了 1.51 cm V s 的最高空穴迁移率和 0.85 cm V s 的最高电子迁移率。聚合物结构对 FET 性能的影响可以通过结晶度、聚合物主链采用边缘取向的趋势以及薄膜状态下聚合物纤维的互连性之间的相互作用得到很好的解释。此外，我们证明了所有基于柔性聚合物的 FET 都具有很高的抗拉伸应力能力，在弯曲测试后，其载流子迁移率和导通/关断比几乎没有变化。总之，这些高性能、柔性和耐用的 FET 展示了半导体共轭聚合物在柔性电子应用中的潜力。
