Ipatova I, Wady P T, Shubeita S M, Barcellini C, Impagnatiello A, Jimenez-Melero E
School of Materials, The University of Manchester, Manchester, U.K.
Dalton Cumbrian Facility, The University of Manchester, Moor Row, U.K.
J Microsc. 2018 Apr;270(1):110-117. doi: 10.1111/jmi.12662. Epub 2017 Nov 1.
The formation of radiation-induced dislocation loops and voids in tantalum at 180(2), 345(3) and 590(5)°C was assessed by 3MeV proton irradiation experiments and subsequent damage characterisation using transmission electron microscopy. Voids formed at 345(3)°C and were arranged into a body centred cubic lattice at a damage level of 0.55 dpa. The low vacancy mobility at 180(2)°C impedes enough vacancy clustering and therefore the formation of voids visible by TEM. At 590(5)°C the Burgers vector of the interstitial-type dislocation loops is a<100>, instead of the a/2 <111> Burgers vector characteristic of the loops at 180(2) and 345(3)°C. The lower mobility of a<100> loops hinders the formation of voids at 590(5)°C up to a damage level of 0.55 dpa.
通过3MeV质子辐照实验以及随后使用透射电子显微镜进行的损伤表征,评估了钽在180(2)、345(3)和590(5)°C下辐射诱导位错环和空位的形成。空位在345(3)°C形成,并在损伤水平为0.55 dpa时排列成体心立方晶格。180(2)°C时空位迁移率较低,阻碍了足够的空位聚集,因此阻碍了透射电子显微镜可见的空位形成。在590(5)°C时,间隙型位错环的柏氏矢量为a<100>,而不是180(2)和345(3)°C时环的特征柏氏矢量a/2 <111>。a<100>环较低的迁移率阻碍了590(5)°C下损伤水平达0.55 dpa时空位的形成。