Nandipati Giridhar, Jiang Xiujuan, Vemuri Rama S, Mathaudhu Suveen, Rohatgi Aashish
Pacific Northwest National Laboratory, Richland, WA 99354, United States of America.
J Phys Condens Matter. 2018 Jan 24;30(3):035903. doi: 10.1088/1361-648X/aa9774.
Diffusion of Si atom and vacancy in the A2-phase of α-Fe-Si alloys in the ferromagnetic state, with and without magnetic order and in various temperature ranges, are studied using AKSOME, an on-lattice self-learning KMC code. Diffusion of the Si atom and the vacancy are studied in the dilute limit and up to 12 at.% Si, respectively, in the temperature range 350-700 K. Local Si neighborhood dependent activation energies for vacancy hops were calculated on-the-fly using a broken-bond model based on pairwise interaction. The migration barrier and prefactor for the Si diffusion in the dilute limit were obtained and found to agree with published data within the limits of uncertainty. Simulations results show that the prefactor and the migration barrier for the Si diffusion are approximately an order of magnitude higher, and a tenth of an electron-volt higher, respectively, in the magnetic disordered state than in the fully ordered state. However, the net result is that magnetic disorder does not have a significant effect on Si diffusivity within the range of parameters studied in this work. Nevertheless, with increasing temperature, the magnetic disorder increases and its effect on the Si diffusivity also increases. In the case of vacancy diffusion, with increasing Si concentration, its diffusion prefactor decreases while the migration barrier more or less remained constant and the effect of magnetic disorder increases with Si concentration. Important vacancy-Si/Fe atom exchange processes and their activation barriers were identified, and the effect of energetics on ordered phase formation in Fe-Si alloys are discussed.
利用AKSOME(一种晶格自学习KMC代码)研究了铁磁态下α-Fe-Si合金A2相中的Si原子和空位扩散,包括有无磁序以及在不同温度范围内的情况。分别在350 - 700K温度范围内,研究了稀溶液极限下的Si原子扩散以及Si含量高达12at.%时的空位扩散。使用基于成对相互作用的断键模型实时计算了空位跳跃的局部Si邻域相关活化能。获得了稀溶液极限下Si扩散的迁移势垒和前因子,发现其在不确定度范围内与已发表的数据一致。模拟结果表明,在磁无序状态下,Si扩散的前因子和迁移势垒分别比完全有序状态下高约一个数量级和十分之一电子伏特。然而,最终结果是在本工作研究的参数范围内,磁无序对Si扩散率没有显著影响。尽管如此,随着温度升高,磁无序增加,其对Si扩散率的影响也增加。在空位扩散的情况下,随着Si浓度增加,其扩散前因子降低,而迁移势垒或多或少保持不变,并且磁无序的影响随Si浓度增加。确定了重要的空位-Si/Fe原子交换过程及其活化势垒,并讨论了能量学对Fe-Si合金有序相形成的影响。