Debnath Kapil, Clementi Marco, Bucio Thalía Domínguez, Khokhar Ali Z, Sotto Moïse, Grabska Katarzyna M, Bajoni Daniele, Galli Matteo, Saito Shinichi, Gardes Fredric Y
Opt Express. 2017 Oct 30;25(22):27334-27340. doi: 10.1364/OE.25.027334.
Ultrahigh-Q Photonic Crystal cavities were realized in a suspended Silicon Rich Nitride (SiNx) platform for applications at telecom wavelengths. Using a line width modulated cavity design we achieved a simulated Q of 520,000 with a modal volume of 0.77(λ/n). The fabricated cavities were measured using the resonance scattering technique and we demonstrated a measured Q of 120,000. The experimental spectra at different input power also indicate that the non-linear losses are negligible in this material platform.
超高Q值光子晶体腔是在用于电信波长应用的悬浮富硅氮化物（SiNx）平台上实现的。通过线宽调制腔设计，我们实现了模拟Q值为520,000，模式体积为0.77(λ/n)。使用共振散射技术对制造的腔进行了测量，我们展示了测量得到的Q值为120,000。不同输入功率下的实验光谱还表明，在这种材料平台中非线性损耗可以忽略不计。
