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碳(C)、氰基(CN)、氰基(CN)、羰基(CO)、氮(N)、硝基(NO)、硝基(NO)和氧(O)中强化学键的趋势。

Trends in Strong Chemical Bonding in C, CN, CN, CO, N, NO, NO, and O.

作者信息

Kepp Kasper P

机构信息

Technical University of Denmark , DTU Chemistry, Building 206, 2800 Kgs. Lyngby, DK- Denmark.

出版信息

J Phys Chem A. 2017 Nov 30;121(47):9092-9098. doi: 10.1021/acs.jpca.7b08201. Epub 2017 Nov 16.

Abstract

The strong chemical bonds between C, N, and O play a central role in chemistry, and their formation and cleavage are critical steps in very many catalytic processes. The close-lying molecular orbital energies and large correlation effects pose a challenge to electronic structure calculations and have led to different bonding interpretations, most notably for C. One way to approach this problem is by strict benchmark comparison of related systems. This work reports reference electronic structures and computed bond dissociation enthalpies D for C, CN, CN, CO, N, NO, NO, O and related systems C and C at chemical accuracy (∼1 kcal/mol or 4 kJ/mol) using CCSD(T)/aug-cc-pV5Z, with additional benchmarks of HF, MP2, CCSD, explicitly correlated F12 methods, and four density functionals. Very large correlation and basis set effects are responsible for up to 93% of total D. The order of the molecular orbitals 1π and 3σ changes, as seen in textbooks, depending on total and effective nuclear charge. Linear trends are observed in 2σ-2σ orbital splitting (R = 0.91) and in D of C, C, and C (R = 0.99). The correlation component of D of C is by far the largest (∼93%) due to a poor HF description. Importantly, density functional theory fails massively in describing this series consistently in both limits of effective nuclear charge, and Hartree-Fock exchange or meta functionals do not remedy this 100 kJ/mol error, which should thus be addressed in future density functional developments as it affects very many studies involving cleavage or formation of these bonds.

摘要

碳(C)、氮(N)和氧(O)之间的强化学键在化学中起着核心作用,它们的形成和断裂是许多催化过程中的关键步骤。相邻的分子轨道能量和较大的相关效应给电子结构计算带来了挑战,并导致了不同的键合解释,尤其是对于碳。解决这个问题的一种方法是对相关体系进行严格的基准比较。这项工作报告了使用CCSD(T)/aug-cc-pV5Z在化学精度(约1千卡/摩尔或4千焦/摩尔)下,碳、氰基(CN)、异氰基(CN)、羰基(CO)、氮分子(N₂)、一氧化氮(NO)、二氧化氮(NO₂)、氧分子(O₂)以及相关体系C₂和C₂⁺的参考电子结构和计算得到的键解离焓D,同时还给出了HF、MP2、CCSD、显式相关的F12方法以及四种密度泛函的额外基准数据。高达93%的总D是由非常大的相关效应和基组效应造成的。正如教科书中所看到的,1π和3σ分子轨道的顺序会根据总核电荷和有效核电荷而变化。在2σ-2σ轨道分裂(R = 0.91)以及C₂、C₂⁺和C₂²⁺的D(R = 0.

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