Bos Jan-Willem G
Institute of Chemical Sciences and Centre for Advanced Energy Storage and Recovery, School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS, UK.
IUCrJ. 2017 Oct 27;4(Pt 6):712-713. doi: 10.1107/S2052252517015299. eCollection 2017 Nov 1.
Heusler materials have attracted a large amount of attention in the development of spintronic technologies. In this issue, Wang [ (2017), , 758-768] show how strain can be used to tune the band structure of these materials.
赫斯勒材料在自旋电子技术的发展中引起了广泛关注。在本期中,王[(2017年),,758 - 768]展示了如何利用应变来调节这些材料的能带结构。