Department of Chemistry, Graduate School of Science, Tohoku University, Aramaki Aza Aoba, Aoba-Ku, Sendai, 980-8578, Japan.
Institut national de la recherche scientifique (INRS-EMT), Varennes, QC, J3X 1S2, Canada.
Photosynth Res. 2018 May;136(2):229-243. doi: 10.1007/s11120-017-0461-0. Epub 2017 Nov 9.
Some mosses are extremely tolerant of drought stress. Their high drought tolerance relies on their ability to effectively dissipate absorbed light energy to heat under dry conditions. The energy dissipation mechanism in a drought-tolerant moss, Bryum argenteum, has been investigated using low-temperature picosecond time-resolved fluorescence spectroscopy. The results are compared between moss thalli samples harvested in Antarctica and in Japan. Both samples show almost the same quenching properties, suggesting an identical drought tolerance mechanism for the same species with two completely different habitats. A global target analysis was applied to a large set of data on the fluorescence-quenching dynamics for the 430-nm (chlorophyll-a selective) and 460-nm (chlorophyll-b and carotenoid selective) excitations in the temperature region from 5 to 77 K. This analysis strongly suggested that the quencher is formed in the major peripheral antenna of photosystem II, whose emission spectrum is significantly broadened and red-shifted in its quenched form. Two emission components at around 717 and 725 nm were assigned to photosystem I (PS I). The former component at around 717 nm is mildly quenched and probably bound to the PS I core complex, while the latter at around 725 nm is probably bound to the light-harvesting complex. The dehydration treatment caused a blue shift of the PS I emission peak via reduction of the exciton energy flow to the pigment responsible for the 725 nm band.
一些苔藓植物具有极强的耐旱能力。它们的高耐旱性依赖于其在干燥条件下有效耗散吸收光能的能力。采用低温皮秒时间分辨荧光光谱法研究了耐旱苔藓植物(银叶真藓)的能量耗散机制。比较了在南极和日本采集的苔藓植物样本的结果。两个样本都表现出几乎相同的猝灭特性,这表明在具有完全不同生境的同一物种中,存在相同的耐旱机制。对来自 5 到 77 K 温度范围内的叶绿素 a 选择性(430nm)和叶绿素 b 和类胡萝卜素选择性(460nm)激发的荧光猝灭动力学的大组数据进行了全局目标分析。该分析强烈表明,猝灭剂形成于光系统 II 的主要外围天线中,其发射光谱在猝灭形式下显著展宽和红移。在大约 717 和 725nm 处分配了两个发射组件到光系统 I(PS I)。在大约 717nm 左右的前一个组件被轻度猝灭,可能与 PS I 核心复合物结合,而在大约 725nm 左右的后一个组件可能与光捕获复合物结合。脱水处理通过减少向负责 725nm 带的色素的激子能量流,导致 PS I 发射峰的蓝移。