Sønsteby Henrik H, Weibye Kristian, Bratvold Jon E, Nilsen Ola
Department of Chemistry, University of Oslo, Norway.
Dalton Trans. 2017 Nov 28;46(46):16139-16144. doi: 10.1039/c7dt03753h.
The application range for atomic layer deposition (ALD) has now been extended to include the deposition of rubidium-containing films, enabling the deposition of new and exploratory types of compounds by ALD. The properties of rubidium t-butoxide as an ALD precursor are promising, revealing similar behavior as its lithium, sodium and potassium counterparts. The deposition of rubidium containing films is reported as proof of concept through the Rb-Ti-O and Rb-Nb-O systems. Rubidium content in the doping level range of Rb is controllably achieved in Rb:TiO up to 20%, whereas Rb can be introduced as a major component in Rb:NbO. Perovskite RbNbO, otherwise unattainable in bulk systems under ambient conditions, is shown to be stabilized on SrTiO (100) substrates. This report opens up the investigation of thin films of new and unexplored systems, not only in the world of ALD, but in materials chemistry in general.
原子层沉积（ALD）的应用范围现已扩展到包括含铷薄膜的沉积，从而能够通过ALD沉积新型和探索性的化合物。叔丁醇铷作为ALD前驱体的性能很有前景，显示出与其锂、钠和钾同类物相似的行为。通过Rb-Ti-O和Rb-Nb-O系统报道了含铷薄膜的沉积作为概念验证。在Rb:TiO中，铷的掺杂水平范围可达20%，铷含量可控，而在Rb:NbO中，铷可作为主要成分引入。钙钛矿型RbNbO在环境条件下在块状体系中无法获得，但已证明可在SrTiO(100)衬底上稳定存在。本报告不仅开启了在ALD领域，而且在一般材料化学领域对新型和未探索体系薄膜的研究。
