Saat Gülbahar, Balci Fadime Mert, Alsaç Elif Pınar, Karadas Ferdi, Dag Ömer
Department of Chemistry, Bilkent University, 06800, Ankara, Turkey.
UNAM-National Nanotechnology Research Center and Institute of Materials Science and Nanotechnology, Bilkent University, 06800, Ankara, Turkey.
Small. 2018 Jan;14(1). doi: 10.1002/smll.201701913. Epub 2017 Nov 17.
Mesoporous thin films of transition metal lithiates (TML) belong to an important group of materials for the advancement of electrochemical systems. This study demonstrates a simple one pot method to synthesize the first examples of mesoporous LiCoO and LiMn O thin films. Molten salt assisted self-assembly can be used to establish an easy route to produce mesoporous TML thin films. The salts (LiNO and Co(H O) or Mn(H O) ) and two surfactants (10-lauryl ether and cethyltrimethylammonium bromide (CTAB) or cethyltrimethylammonium nitrate (CTAN)) form stable liquid crystalline mesophases. The charged surfactant is needed for the assembly of the necessary amount of salt in the hydrophilic domains of the mesophase, which produces stable metal lithiate pore-walls upon calcination. The films have a large pore size with a high surface area that can be increased up to 82 m g . The method described can be adopted to synthesize other metal oxides and metal lithiates. The mesoporous thin films of LiCoO show promising performance as water oxidation catalysts under pH 7 and 14 conditions. The electrodes, prepared using CTAN as the cosurfactant, display the lowest overpotentials in the literature among other LiCoO systems, as low as 376 mV at 10 mA cm and 282 mV at 1 mA cm .
过渡金属锂化物(TML)的介孔薄膜属于推动电化学系统发展的一类重要材料。本研究展示了一种简单的一锅法来合成介孔LiCoO和LiMn O薄膜的首个实例。熔盐辅助自组装可用于建立一条制备介孔TML薄膜的简便途径。盐(LiNO和Co(H₂O)₆₂或Mn(H₂O)₆₂)以及两种表面活性剂(月桂醇聚醚和十六烷基三甲基溴化铵(CTAB)或十六烷基三甲基硝酸铵(CTAN))形成稳定的液晶中间相。在中间相的亲水域中组装必要量的盐需要带电表面活性剂,煅烧后会产生稳定的金属锂化物孔壁。这些薄膜具有大孔径和高比表面积,比表面积可增加至82 m²/g。所描述的方法可用于合成其他金属氧化物和金属锂化物。LiCoO的介孔薄膜在pH 7和14条件下作为水氧化催化剂表现出有前景的性能。使用CTAN作为共表面活性剂制备的电极,在其他LiCoO体系中,在文献报道中显示出最低过电位,在10 mA/cm²时低至376 mV,在1 mA/cm²时低至282 mV。