Wu Bi-Yi, Sheng Xin-Qing, Fabregas Rene, Hao Yang
School of electronic engineering and computer science, Queen Mary University of London, London, E14NS, UK.
School of Information and Electronics, Beijing Institute of Technology, Beijing, 100081, China.
Sci Rep. 2017 Nov 22;7(1):16064. doi: 10.1038/s41598-017-13937-5.
A three-dimensional finite element numerical modeling for the scanning microwave microscopy (SMM) setup is applied to study the full-wave quantification of the local material properties of samples. The modeling takes into account the radiation and scattering losses of the nano-sized probe neglected in previous models based on low-frequency assumptions. The scanning techniques of approach curves and constant height are implemented. In addition, we conclude that the SMM has the potential for use as a broadband dielectric spectroscopy operating at higher frequencies up to THz. The results demonstrate the accuracy of previous models. We draw conclusions in light of the experimental results.
应用一种用于扫描微波显微镜（SMM）装置的三维有限元数值建模方法，来研究样品局部材料特性的全波定量分析。该建模考虑了基于低频假设的先前模型中被忽略的纳米尺寸探针的辐射和散射损耗。实现了接近曲线和恒定高度的扫描技术。此外，我们得出结论，SMM有潜力用作工作频率高达太赫兹的宽带介电谱仪。结果证明了先前模型的准确性。我们根据实验结果得出结论。
