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采用基于 AlN 的深紫外透明玻璃电极的高效深紫外发光二极管。

Highly Efficient Deep-UV Light-Emitting Diodes Using AlN-Based Deep-UV-Transparent Glass Electrodes.

机构信息

School of Electrical Engineering, Korea University , Seoul 136-701, Republic of Korea.

LED R&D Center, LED Division, LG Innotek Co., Ltd. , Paju 413-901, Republic of Korea.

出版信息

ACS Appl Mater Interfaces. 2017 Dec 20;9(50):43774-43781. doi: 10.1021/acsami.7b13624. Epub 2017 Dec 8.

Abstract

Many studies have set out to develop electrodes that are both highly conductive and transparent across a wide spectral region, from visible to deep UV (DUV). However, few solutions have been proposed because these two properties are mutually exclusive. In this paper, an AlN-based glass electrode film with a conducting filament formed by the application of an ac pulse is proposed as a solution, which exhibits a high transmittance in the DUV region (over 95.6% at 280 nm) and a low contact resistance with a p-AlGaN layer (ρ = 3.2 × 10 Ω·cm). The Ohmic conduction mechanism at the interface between the AlN film and the p-AlGaN layers is fully examined using various analytical tools. This AlN film is finally applied to a 280 nm top-emitting light-emitting diode, to verify the validity of the method, which exhibits very stable operations with a forward voltage of 7.7 V at 20 mA, a light output power of 7.49 mW at 100 mA, and, most importantly, a record high external quantum efficiency of 2.8% after packaging.

摘要

许多研究都致力于开发在从可见光到深紫外 (DUV) 宽光谱范围内具有高导电性和透明度的电极。然而,由于这两种性质相互排斥,因此很少有解决方案被提出。本文提出了一种基于 AlN 的玻璃电极薄膜,该薄膜通过施加交流脉冲形成导电丝,在 DUV 区域具有高透过率(在 280nm 时超过 95.6%),并且与 p-AlGaN 层的接触电阻低(ρ=3.2×10Ω·cm)。使用各种分析工具充分研究了 AlN 薄膜与 p-AlGaN 层之间界面的欧姆传导机制。最后,将该 AlN 薄膜应用于 280nm 的顶发射发光二极管,以验证该方法的有效性,该方法在 20mA 时的正向电压为 7.7V,在 100mA 时的光输出功率为 7.49mW,最重要的是,经过封装后,外量子效率达到了创纪录的 2.8%。

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