Zhang N, Xu F J, Lang J, Wang L B, Wang J M, Sun Y H, Liu B Y, Xie N, Fang X Z, Yang X L, Kang X N, Wang X Q, Qin Z X, Ge W K, Shen B
Opt Express. 2021 Jan 18;29(2):2394-2401. doi: 10.1364/OE.416826.
Enhancement of light extraction efficiency (LEE) of AlGaN-based deep-ultraviolet (DUV) light emitting diodes (LEDs) has been attempted by adopting Ag-nanodots/Al reflective electrodes on a highly transparent complex p-type layer. By thinning the p-GaN to several nm, highly DUV transparent p-type layer is achieved, making it meaningful for the application of reflective electrodes composed of Ag-nanodots and Al film to allow most light emitted upward to be reflected back to the sapphire side. By this approach, the maximum light output power and external quantum efficiency of the DUV-LEDs with optimized Ag nanodots/Al electrodes are severally increased by 52% and 58%, respectively, compared to those with traditional Ni/Au electrodes when the current is below 200 mA.
通过在高度透明的复合 p 型层上采用银纳米点/铝反射电极，尝试提高基于 AlGaN 的深紫外（DUV）发光二极管（LED）的光提取效率（LEE）。通过将 p-GaN 减薄至几纳米，可实现高度 DUV 透明的 p 型层，这使得由银纳米点和铝膜组成的反射电极的应用变得有意义，因为它能使向上发射的大部分光反射回蓝宝石一侧。通过这种方法，与采用传统 Ni/Au 电极的 DUV-LED 相比，当电流低于 200 mA 时，采用优化的银纳米点/铝电极的 DUV-LED 的最大光输出功率和外量子效率分别提高了 52%和 58%。
