有机-无机杂化钙钛矿非易失性电阻式随机存取存储器中与晶粒尺寸相关的记忆效应行为。

Heo Jin Hyuck, Shin Dong Hee, Moon Sang Hwa, Lee Min Ho, Kim Do Hun, Oh Seol Hee, Jo William, Im Sang Hyuk

Department of Chemical and Biological Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 136-713, Republic of Korea.

Department of Physics, Ewha Womans University, 52 Ewhayeodae-gil, Seodaemun-gu, Seoul, 03760, Republic of Korea.

Sci Rep. 2017 Nov 29;7(1):16586. doi: 10.1038/s41598-017-16805-4.

The crystal grain size of CHNHPbI (MAPbI) organic-inorganic hybrid perovskite (OHP) film was controllable in the range from ~60 nm to ~600 nm by non-solvents inter-diffusion controlled crystallization process in dripping crystallization method for the formation of perovskite film. The MAPbI OHP non-volatile resistive random access memory with ~60 nm crystal grain size exhibited >0.1 TB/in storage capacity, >600 cycles endurance, >10 s data retention time, ~0.7 V set, and ~-0.61 V re-set bias voltage.

通过在滴铸结晶法中采用非溶剂互扩散控制结晶过程来制备钙钛矿薄膜，CHNHPbI（MAPbI）有机-无机杂化钙钛矿（OHP）薄膜的晶粒尺寸可在约60纳米至约600纳米范围内进行控制。具有约60纳米晶粒尺寸的MAPbI OHP非易失性电阻式随机存取存储器表现出大于0.1TB/英寸的存储容量、大于600次的循环耐久性、大于10秒的数据保持时间、约0.7伏的设置电压和约-0.61伏的复位偏置电压。