Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University , Chongqing 400044, China.
Sichuan Province Key Laboratory of Information Materials and Devices Application, College of Optoelectronic Technology, Chengdu University of Information Technology , Chengdu 610225, China.
ACS Appl Mater Interfaces. 2017 Feb 22;9(7):6171-6176. doi: 10.1021/acsami.6b15149. Epub 2017 Feb 7.
All-inorganic perovskite CsPbX (X = Cl, Br, or I) is widely used in a variety of photoelectric devices such as solar cells, light-emitting diodes, lasers, and photodetectors. However, studies to understand the flexible CsPbX electrical application are relatively scarce, mainly due to the limitations of the low-temperature fabricating process. In this study, all-inorganic perovskite CsPbBr films were successfully fabricated at 75 °C through a two-step method. The highly crystallized films were first employed as a resistive switching layer in the Al/CsPbBr/PEDOT:PSS/ITO/PET structure for flexible nonvolatile memory application. The resistive switching operations and endurance performance demonstrated the as-prepared flexible resistive random access memory devices possess reproducible and reliable memory characteristics. Electrical reliability and mechanical stability of the nonvolatile device were further tested by the robust current-voltage curves under different bending angles and consecutive flexing cycles. Moreover, a model of the formation and rupture of filaments through the CsPbBr layer was proposed to explain the resistive switching effect. It is believed that this study will offer a new setting to understand and design all-inorganic perovskite materials for future stable flexible electronic devices.
全无机钙钛矿 CsPbX（X = Cl、Br 或 I）广泛应用于各种光电设备，如太阳能电池、发光二极管、激光器和光电探测器。然而，对于理解柔性 CsPbX 电应用的研究相对较少，主要是由于低温制造工艺的限制。在这项研究中，通过两步法成功地在 75°C 下制备了全无机钙钛矿 CsPbBr 薄膜。首先，高结晶薄膜被用作 Al/CsPbBr/PEDOT:PSS/ITO/PET 结构中的阻变开关层，用于柔性非易失性存储器应用。所制备的柔性电阻式随机存取存储器器件具有可重复和可靠的存储特性，其阻变开关操作和耐久性性能得到了证明。通过不同弯曲角度和连续弯曲循环下的稳健电流-电压曲线，进一步测试了非易失性器件的电可靠性和机械稳定性。此外，还提出了通过 CsPbBr 层形成和破裂细丝的模型来解释阻变效应。相信这项研究将为未来稳定的柔性电子器件提供一种理解和设计全无机钙钛矿材料的新方法。
