Department of Physics and State Key Laboratory of Silicon Materials, Zhejiang University , Hangzhou 310027, P.R. China.
Faculty of Physics and Materials Sciences Center, Philipps-Universität Marburg , 35032 Marburg, Germany.
ACS Appl Mater Interfaces. 2018 Jan 10;10(1):1356-1362. doi: 10.1021/acsami.7b14121. Epub 2017 Dec 19.
Owing to a complex monocline structure and high-density of defects in monocrystalline GaTe, the performance of GaTe-based electronic devices is considerably compromised. Yet, the defects' nature in GaTe could be a merit rather than a shortcoming in other realms. In our work, the density of defects in GaTe films is utilized for a facile decoration of Au nanoparticles (NPs), which allowed us to extend its application potential to the domain of surface enhanced Raman scattering (SERS) for the first time. Two-dimensional (2D) GaTe layered structures are prepared by mechanical exfoliation, and high-density Au NPs are synthesized by immersion of 2D GaTe in HAuCl aqueous solution. By varying the immersion time, the sizes and coverage rate of Au NPs on GaTe can be elaborately tuned. Thanks to the defect nature of GaTe, the maximum coverage amounts to 98%. The hereby achieved Au-NPs-2D-GaTe hybrid structure demonstrates outstanding properties as a superior SERS substrate for ultrasensitive detection of R6G aromatic molecules. Remarkably, the enhancement factor reaches up to 1.6 × 10, and the minimum detectable concentration is 10 M, undercutting that of recently reported Au-NPs-MoS SERS and Au-NPs-graphene SERS substrates which have a similar structure. With superior detection capability and facile preparation, Au-NPs-GaTe SERS substrates can become a perfect choice for the detection of aromatic molecules.
由于单晶 GaTe 中存在复杂的单斜结构和高密度的缺陷，基于 GaTe 的电子设备的性能受到了相当大的影响。然而，GaTe 中的这些缺陷在其他领域可能是一种优势而非劣势。在我们的工作中，GaTe 薄膜中的缺陷密度被用于简便地修饰金纳米颗粒（NPs），这使得我们首次将其应用潜力扩展到表面增强拉曼散射（SERS）领域。二维（2D）GaTe 层状结构通过机械剥落制备，高密度的 Au NPs 通过将 2D GaTe 浸入 HAuCl 水溶液中合成。通过改变浸泡时间，可以精细调节 Au NPs 在 GaTe 上的尺寸和覆盖率。由于 GaTe 的缺陷性质，最大覆盖率达到 98%。所获得的 Au-NPs-2D-GaTe 杂化结构作为超灵敏检测 R6G 芳香族分子的优异 SERS 基底，表现出优异的性能。值得注意的是，在 10 M 的最低检测浓度下，增强因子高达 1.6×10，低于最近报道的具有类似结构的 Au-NPs-MoS SERS 和 Au-NPs-石墨烯 SERS 基底。由于具有优越的检测能力和简便的制备方法，Au-NPs-GaTe SERS 基底可以成为检测芳香族分子的理想选择。
