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MoS 层中由铁电极化控制的虚拟面外压电响应。

Virtual Out-of-Plane Piezoelectric Response in MoS Layers Controlled by Ferroelectric Polarization.

机构信息

Department of Physics and New and Renewable Energy Research Center (NREC), Ewha Womans University , Seoul 03760, Republic of Korea.

出版信息

ACS Appl Mater Interfaces. 2018 Jan 10;10(1):1334-1339. doi: 10.1021/acsami.7b14001. Epub 2017 Dec 19.

Abstract

The MoS carrier distribution can be controlled with the use of a dielectric environment substrate. Ferroelectric thin films are used to investigate the electrical responses at the MoS layer. The MoS/(111)-PbTiO vertical heterostructure is investigated, and the electrical responses, including piezoelectricity, are obtained using piezoresponse force microscopy. The piezoelectric response modifications obtained at the MoS layer on the ferroelectric thin films are a result of the depolarizing effect. In particular, the piezoelectricity enhancement is observed at the 19-layer MoS because of an induced dipole effect. By considering the polarization effects of ferroelectric thin films, the electrical responses at the MoS layers can be controlled, and the interfacial carrier distribution at the interface results in different electrical performances at the MoS.

摘要

可以通过使用介电环境衬底来控制 MoS 载体分布。铁电薄膜用于研究 MoS 层的电响应。研究了 MoS/(111)-PbTiO 垂直异质结构,并使用压电力显微镜获得了包括压电性在内的电响应。在铁电薄膜上的 MoS 层中获得的压电响应修饰是去极化效应的结果。特别是,由于感应偶极子效应,在 19 层 MoS 中观察到了压电增强。通过考虑铁电薄膜的极化效应,可以控制 MoS 层的电响应,并且界面处的载流子分布导致 MoS 处的不同电性能。

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