Vermeij T, Plancher E, Tasan C C
Massachusetts Institute of Technology, Department of Materials Science and Engineering, 77 Massachusetts Avenue, Cambridge, MA 02139, USA; Eindhoven University of Technology, Department of Mechanical Engineering, Den Dolech 2, 5612 AZ Eindhoven, The Netherlands.
Massachusetts Institute of Technology, Department of Materials Science and Engineering, 77 Massachusetts Avenue, Cambridge, MA 02139, USA.
Ultramicroscopy. 2018 Mar;186:35-41. doi: 10.1016/j.ultramic.2017.12.012. Epub 2017 Dec 7.
Focused ion beam (FIB) milling has enabled the development of key microstructure characterization techniques (e.g. 3D electron backscatter diffraction (EBSD), 3D scanning electron microscopy imaging, site-specific sample preparation for transmission electron microscopy, site-specific atom probe tomography), and micro-mechanical testing techniques (e.g. micro-pillar compression, micro-beam bending, in-situ TEM nanoindentation). Yet, in most milling conditions, some degree of FIB damage is introduced via material redeposition, Ga ion implantation or another mechanism. The level of damage and its influence vary strongly with milling conditions and materials characteristics, and cannot always be minimized. Here, a masking technique is introduced, that employs standard FIB-SEM equipment to protect specific surfaces from redeposition and ion implantation. To investigate the efficiency of this technique, high angular resolution EBSD (HR-EBSD) has been used to monitor the quality of the top surface of several micro-pillars, as they were created by milling a ringcore hole in a stress-free silicon wafer, with or without protection due to an "umbrella". HR-EBSD provides a high-sensitivity estimation of the amount of FIB damage on the surface. Without the umbrella, EBSD patterns are severely influenced, especially within 5 µm of the milled region. With an optimized umbrella, sharp diffraction patterns are obtained near the hole, as revealed by average cross correlation factors greater than 0.9 and equivalent phantom strains of the order 2 × 10. Thus, the umbrella method is an efficient and versatile tool to support a variety of FIB based techniques.
聚焦离子束(FIB)铣削推动了关键微观结构表征技术(如三维电子背散射衍射(EBSD)、三维扫描电子显微镜成像、用于透射电子显微镜的特定位置样品制备、特定位置原子探针断层扫描)以及微机械测试技术(如微柱压缩、微梁弯曲、原位透射电子显微镜纳米压痕)的发展。然而,在大多数铣削条件下,会通过材料再沉积、镓离子注入或其他机制引入一定程度的FIB损伤。损伤程度及其影响会因铣削条件和材料特性而有很大差异,且并非总能降至最低。在此,引入了一种掩膜技术,该技术利用标准的FIB-SEM设备来保护特定表面免受再沉积和离子注入的影响。为了研究该技术的效率,在通过在无应力硅晶圆上铣削环形芯孔来制造几个微柱时,使用高角度分辨率EBSD(HR-EBSD)来监测其顶面质量,铣削过程中有或没有“伞形”保护。HR-EBSD可对表面的FIB损伤量进行高灵敏度估计。没有“伞形”保护时,EBSD图案会受到严重影响,尤其是在铣削区域5微米范围内。使用优化后的“伞形”保护时,在孔附近可获得清晰的衍射图案,平均互相关系数大于0.9以及约为2×10的等效虚拟应变表明了这一点。因此,“伞形”方法是一种支持多种基于FIB的技术的高效且通用的工具。