Zhong Xiangli, Wade C Austin, Withers Philip J, Zhou Xiaorong, Cai Changrun, Haigh Sarah J, Burke M Grace
Department of Materials, University of Manchester, Manchester, UK.
Department of Materials, Materials Performance Centre, University of Manchester, Manchester, UK.
J Microsc. 2021 May;282(2):101-112. doi: 10.1111/jmi.12983. Epub 2020 Dec 24.
Recently, the dual beam Xe plasma focused ion beam (Xe pFIB) instrument has attracted increasing interest for site-specific transmission electron microscopy (TEM) sample preparation for a local region of interest as it shows several potential benefits compared to conventional Ga FIB milling. Nevertheless, challenges and questions remain especially in terms of FIB-induced artefacts, which hinder reliable S/TEM microstructural and compositional analysis. Here we examine the efficacy of using Xe pFIB as compared with conventional Ga FIB for TEM sample preparation of Al alloys. Three potential source of specimen preparation artefacts were examined, namely: (1) implantation-induced defects such as amophisation, dislocations, or 'bubble' formation in the near-surface region resulting from ion bombardment of the sample by the incident beam; (2) compositional artefacts due to implantation of the source ions and (3) material redeposition due to the milling process. It is shown that Xe pFIB milling is able to produce improved STEM/TEM samples compared to those produced by Ga milling, and is therefore the preferred specimen preparation route. Strategies for minimising the artefacts induced by Xe pFIB and Ga FIB are also proposed. LAY DESCRIPTION: FIB (focused ion beam) instruments have become one of the most important systems in the preparation of site-specific TEM specimens, which are typically 50-100 nm in thickness. TEM specimen preparation of Al alloys is particularly challenging, as convention Ga-ion FIB produces artefacts in these materials that make microstructural analysis difficult or impossible. Recently, the use of noble gas ion sources, such as Xe, has markedly improved milling speeds and is being used for the preparation of various materials. Hence, it is necessary to investigate the structural defects formed during FIB milling and assess the ion-induced chemical contamination in these TEM samples. Here we explore the feasibility and efficiency of using Xe PFIB as a TEM sample preparation route for Al alloys in comparison with the conventional Ga+FIB.
最近,双束Xe等离子体聚焦离子束(Xe pFIB)仪器在针对感兴趣的局部区域进行特定位置的透射电子显微镜(TEM)样品制备方面引起了越来越多的关注,因为与传统的Ga FIB铣削相比,它显示出一些潜在的优势。然而,挑战和问题仍然存在,特别是在FIB诱导的伪像方面,这阻碍了可靠的扫描透射电子显微镜(S/TEM)微观结构和成分分析。在此,我们研究了与传统Ga FIB相比,使用Xe pFIB进行铝合金TEM样品制备的效果。研究了样品制备伪像的三个潜在来源,即:(1)注入诱导缺陷,如入射束对样品进行离子轰击导致近表面区域出现非晶化、位错或“气泡”形成;(2)源离子注入导致的成分伪像;以及(3)铣削过程导致的材料再沉积。结果表明,与Ga铣削制备的样品相比,Xe pFIB铣削能够制备出更好的扫描透射电子显微镜/透射电子显微镜(STEM/TEM)样品,因此是首选的样品制备方法。还提出了将Xe pFIB和Ga FIB诱导的伪像降至最低的策略。 分层描述:聚焦离子束(FIB)仪器已成为制备特定位置TEM样品的最重要系统之一,这些样品的厚度通常为50-100纳米。铝合金的TEM样品制备尤其具有挑战性,因为传统的Ga离子FIB会在这些材料中产生伪像,使微观结构分析变得困难或无法进行。最近,使用诸如Xe等稀有气体离子源显著提高了铣削速度,并正用于各种材料的制备。因此,有必要研究FIB铣削过程中形成的结构缺陷,并评估这些TEM样品中离子诱导的化学污染。在此,我们探讨了与传统Ga +FIB相比,使用Xe PFIB作为铝合金TEM样品制备途径的可行性和效率。