Wu Ko-Li, Chou Yi, Su Chang-Chou, Yang Chih-Chaing, Lee Wei-I, Chou Yi-Chia
Department of Electrophysics, National Chiao Tung Univeristy, Hisnchu, 300, Taiwan.
Sci Rep. 2017 Dec 20;7(1):17942. doi: 10.1038/s41598-017-17980-0.
We report single crystalline gallium nitride nanowire growth from Ni and Ni-Au catalysts on silicon using hydride vapor phase epitaxy. The growth takes place rapidly; efficiency in time is higher than the conventional nanowire growth in metal-organic chemical vapor deposition and thin film growth in molecular beam epitaxy. The effects of V/III ratio and carrier gas flow on growth are discussed regarding surface polarity and sticking coefficient of molecules. The nanowires of gallium nitride exhibit excellent crystallinity with smooth and straight morphology and uniform orientation. The growth mechanism follows self-assembly from both catalysts, where Au acts as a protection from etching during growth enabling the growth of ultra-long nanowires. The photoluminescence of such nanowires are adjustable by tuning the growth parameters to achieve blue emission. The practical range of parameters for mass production of such high crystal quality and uniformity of nanowires is suggested.
我们报道了利用氢化物气相外延法在硅衬底上由镍和镍 - 金催化剂生长单晶氮化镓纳米线的情况。生长过程迅速；在时间效率方面高于金属有机化学气相沉积法中的传统纳米线生长以及分子束外延法中的薄膜生长。关于分子的表面极性和粘附系数，讨论了V/III比和载气流量对生长的影响。氮化镓纳米线具有优异的结晶度，形态光滑笔直且取向均匀。生长机制遵循两种催化剂的自组装过程，其中金在生长过程中起到防止蚀刻的作用，从而能够生长超长纳米线。通过调整生长参数可调节此类纳米线的光致发光以实现蓝光发射。还提出了大规模生产这种具有高晶体质量和均匀性的纳米线的实际参数范围。
