（BiIn）Se 纳米器件中拓扑相变诱导的三轴各向异性磁电阻。
Topological Phase Transition-Induced Triaxial Vector Magnetoresistance in (BiIn)Se Nanodevices.
机构信息
National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University , Nanjing 210093, China.
National Laboratory of Solid State Microstructures, School of Physics, Nanjing University , Nanjing 210093, China.
出版信息
ACS Nano. 2018 Feb 27;12(2):1537-1543. doi: 10.1021/acsnano.7b08054. Epub 2018 Jan 8.
We report the study of a triaxial vector magnetoresistance (MR) in nonmagnetic (BiIn)Se nanodevices at the composition of x = 0.08. We show a dumbbell-shaped in-plane negative MR up to room temperature as well as a large out-of-plane positive MR. MR at three directions is about in a -3%:-1%:225% ratio at 2 K. Through both the thickness and composition-dependent magnetotransport measurements, we show that the in-plane negative MR is due to the topological phase transition enhanced intersurface coupling near the topological critical point. Our devices suggest the great potential for room-temperature spintronic applications in, for example, vector magnetic sensors.
我们研究了非磁性（BiIn）Se 纳米器件在 x = 0.08 组成下的三轴矢量磁阻（MR）。我们在室温下展示了哑铃形的面内负 MR，以及大的面外正 MR。在 2 K 时，三个方向的 MR 约为-3%：-1%：225%。通过厚度和成分相关的磁输运测量，我们表明面内负 MR 是由于拓扑临界点附近的拓扑相转变增强了界面耦合。我们的器件为室温自旋电子学应用，例如矢量磁传感器，提供了巨大的潜力。
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