Flammini R, Colonna S, Hogan C, Mahatha S K, Papagno M, Barla A, Sheverdyaeva P M, Moras P, Aliev Z S, Babanly M B, Chulkov E V, Carbone C, Ronci F
Istituto di Struttura della Materia-CNR (ISM-CNR), Via del Fosso del Cavaliere 100, I-00133 Roma, Italy.
Nanotechnology. 2018 Feb 9;29(6):065704. doi: 10.1088/1361-6528/aaa2c4.
We report a study of the interface between antimony and the prototypical topological insulator BiSe. Scanning tunnelling microscopy measurements show the presence of ordered domains displaying a perfect lattice match with bismuth selenide. Density functional theory calculations of the most stable atomic configurations demonstrate that the ordered domains can be attributed to stacks of β-antimonene.
我们报告了一项关于锑与典型拓扑绝缘体BiSe界面的研究。扫描隧道显微镜测量结果表明存在有序畴,其与硒化铋呈现出完美的晶格匹配。对最稳定原子构型的密度泛函理论计算表明,这些有序畴可归因于β-锑烯堆叠。