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通过近邻效应实现β-锑烯在BiSe上的拓扑化

Topologization of β-antimonene on BiSe via proximity effects.

作者信息

Holtgrewe K, Mahatha S K, Sheverdyaeva P M, Moras P, Flammini R, Colonna S, Ronci F, Papagno M, Barla A, Petaccia L, Aliev Z S, Babanly M B, Chulkov E V, Sanna S, Hogan C, Carbone C

机构信息

Institut für Theoretische Physik and Center for Materials Research (LaMa), Justus-Liebig-Universität Gießen, Heinrich-Buff-Ring 16, 35392, Gießen, Germany.

Istituto di Struttura Della Materia, Consiglio Nazionale Delle Ricerche, 34149, Trieste, Italy.

出版信息

Sci Rep. 2020 Sep 3;10(1):14619. doi: 10.1038/s41598-020-71624-4.

DOI:10.1038/s41598-020-71624-4
PMID:32884112
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7471962/
Abstract

Topological surface states usually emerge at the boundary between a topological and a conventional insulator. Their precise physical character and spatial localization depend on the complex interplay between the chemical, structural and electronic properties of the two insulators in contact. Using a lattice-matched heterointerface of single and double bilayers of β-antimonene and bismuth selenide, we perform a comprehensive experimental and theoretical study of the chiral surface states by means of microscopy and spectroscopic measurements complemented by first-principles calculations. We demonstrate that, although β-antimonene is a trivial insulator in its free-standing form, it inherits the unique symmetry-protected spin texture from the substrate via a proximity effect that induces outward migration of the topological state. This "topologization" of β-antimonene is found to be driven by the hybridization of the bands from either side of the interface.

摘要

拓扑表面态通常出现在拓扑绝缘体和传统绝缘体的边界处。它们精确的物理特性和空间局域性取决于相互接触的两种绝缘体的化学、结构和电子性质之间复杂的相互作用。利用β - 锑烯和硒化铋单双层的晶格匹配异质界面,我们通过显微镜和光谱测量,并辅以第一性原理计算,对手性表面态进行了全面的实验和理论研究。我们证明,尽管β - 锑烯在其独立存在形式下是一种平凡绝缘体,但它通过一种诱导拓扑态向外迁移的近邻效应,从衬底继承了独特的对称性保护自旋纹理。发现β - 锑烯的这种“拓扑化”是由界面两侧能带的杂化驱动的。

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引用本文的文献

1
Giant and Tunable Out-of-Plane Spin Polarization of Topological Antimonene.拓扑锑烯的巨大且可调谐的面外自旋极化
Nano Lett. 2023 Jul 26;23(14):6277-6283. doi: 10.1021/acs.nanolett.3c00153. Epub 2023 Jul 17.
2
Evolution of Topological Surface States Following Sb Layer Adsorption on BiSe.在BiSe上吸附Sb层后拓扑表面态的演化
Materials (Basel). 2021 Apr 2;14(7):1763. doi: 10.3390/ma14071763.

本文引用的文献

1
Temperature Driven Phase Transition at the Antimonene/BiSe van der Waals Heterostructure.锑烯/铋硒范德华异质结构中的温度驱动相变
ACS Nano. 2019 Sep 24;13(9):10481-10489. doi: 10.1021/acsnano.9b04377. Epub 2019 Sep 5.
2
Controlling Topological States in Topological/Normal Insulator Heterostructures.调控拓扑/正常绝缘体异质结构中的拓扑态
ACS Omega. 2018 Nov 26;3(11):15900-15906. doi: 10.1021/acsomega.8b01836. eCollection 2018 Nov 30.
3
Modulating Epitaxial Atomic Structure of Antimonene through Interface Design.通过界面设计调控锑烯的外延原子结构
Adv Mater. 2019 Jul;31(29):e1902606. doi: 10.1002/adma.201902606. Epub 2019 Jun 3.
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Observation of chiral surface excitons in a topological insulator BiSe.拓扑绝缘体BiSe中手性表面激子的观测
Proc Natl Acad Sci U S A. 2019 Mar 5;116(10):4006-4011. doi: 10.1073/pnas.1813514116. Epub 2019 Feb 20.
5
Evidence of β-antimonene at the Sb/BiSe interface.锑/铋硒界面处β-锑烯的证据。
Nanotechnology. 2018 Feb 9;29(6):065704. doi: 10.1088/1361-6528/aaa2c4.
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Atomically Abrupt Topological p-n Junction.原子突变拓扑 p-n 结。
ACS Nano. 2017 Oct 24;11(10):9671-9677. doi: 10.1021/acsnano.7b03880. Epub 2017 Aug 24.
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Large-Gap Magnetic Topological Heterostructure Formed by Subsurface Incorporation of a Ferromagnetic Layer.通过在铁磁层中引入亚表面层的方法制备大带隙磁拓扑异质结。
Nano Lett. 2017 Jun 14;17(6):3493-3500. doi: 10.1021/acs.nanolett.7b00560. Epub 2017 Jun 5.
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Improved Density Dependent Correction for the Description of London Dispersion Forces.用于描述伦敦色散力的改进密度相关校正
J Chem Theory Comput. 2013 Oct 8;9(10):4293-9. doi: 10.1021/ct400694h. Epub 2013 Sep 10.
9
Vertical twinning of the Dirac cone at the interface between topological insulators and semiconductors.拓扑绝缘体和半导体界面处的狄拉克锥的垂直孪晶。
Nat Commun. 2015 Jul 3;6:7630. doi: 10.1038/ncomms8630.
10
Topological proximity effect in a topological insulator hybrid.拓扑绝缘体杂化中的拓扑近邻效应。
Nat Commun. 2015 Mar 12;6:6547. doi: 10.1038/ncomms7547.