State Key Laboratory on Tunable Laser Technology, Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055, China.
Nanoscale. 2018 Jan 25;10(4):2045-2051. doi: 10.1039/c7nr08600h.
High quality (Q) factor microdisks are fundamental building blocks of on-chip integrated photonic circuits and biological sensors. The resonant modes in microdisks circulate near their boundaries, making their performances strongly dependent upon surface roughness. Surface-tension-induced microspheres and microtoroids are superior to other dielectric microdisks when comparing Q factors. However, most photonic materials such as silicon and negative photoresists are hard to be reflowed and thus the realizations of high-Q microdisks are strongly dependent on electron-beam lithography. Herein, we demonstrate a robust, cost-effective, and highly reproducible technique to fabricate ultrahigh-Q microdisks. By using silica microtoroids as masks, we have successfully replicated their ultrasmooth boundaries in a photoresist via anisotropic dry etching. The experimentally recorded Q factors of passive microdisks can be as large as 1.5 × 10. Similarly, ultrahigh Q microdisk lasers have also been replicated in dye-doped polymeric films. The laser linewidth is only 8 pm, which is limited by the spectrometer and is much narrower than that in previous reports. Meanwhile, high-Q deformed microdisks have also been fabricated by controlling the shape of microtoroids, making the internal ray dynamics and external directional laser emissions controllable. Interestingly, this technique also applies to other materials. Silicon microdisks with Q > 10 have been experimentally demonstrated with a similar process. We believe this research will be important for the advances of high-Q micro-resonators and their applications.
高质量(Q)因子微盘是片上集成光子电路和生物传感器的基本构建块。微盘中的共振模式在其边界附近循环,因此其性能强烈依赖于表面粗糙度。与其他介电微盘相比,由表面张力诱导的微球和微环具有更高的 Q 因子。然而,大多数光子材料,如硅和负性光刻胶,难以再流,因此高 Q 微盘的实现强烈依赖于电子束光刻。在此,我们展示了一种稳健、经济高效且高度可重复的制造超高 Q 微盘的技术。通过使用二氧化硅微环作为掩模,我们通过各向异性干法刻蚀成功地在光刻胶中复制了其超光滑的边界。被动微盘的实验记录 Q 因子可高达 1.5×10。同样,也在掺杂染料的聚合物薄膜中复制了超高 Q 微盘激光器。激光线宽仅为 8 pm,这受到光谱仪的限制,比以前的报告窄得多。同时,通过控制微环的形状,也制造出了超高 Q 变形微盘,从而可以控制内部光线动力学和外部定向激光发射。有趣的是,该技术也适用于其他材料。使用类似的工艺,已经实验证明了 Q>10 的硅微盘。我们相信这项研究对于高 Q 微谐振器及其应用的发展将是重要的。