Chen Hong, Chen Yu-Kun, Lin Hua, Shen Jin-Ni, Wu Li-Ming, Wu Xin-Tao
State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences , Fuzhou, Fujian 350002, People's Republic of China.
College of Materials Science and Engineering, Fuzhou University , Fujian 350108, People's Republic of China.
Inorg Chem. 2018 Feb 5;57(3):916-920. doi: 10.1021/acs.inorgchem.7b03002. Epub 2018 Jan 11.
A quaternary narrow-band-gap semiconductor, BaCrGeSe, has been discovered by solid-state reaction. It features a new structure type and crystallizes in the triclinic space group P1̅ (No. 2). The featured 2D anionic layers are constructed by condensed CrSe octahedra that are stacking along the c axis, with dispersed GeSe tetrahedra and located Ba cations forming these layers. The energy-band structure shows a clear separation between the region of electronic conduction and the zone of electronic insulation. Significantly, an undoped BaCrGeSe sample shows a desirable low thermal conductivity κ (0.51-0.87 W/m·K) and a high Seebeck coefficient S (351-404 μV/K) and reaches a ZT ≈ 0.08 at 773 K.
