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具有温和玻璃化转变温度的平衡双极性共轭聚合物,实现高性能柔性场效应晶体管。

Well-Balanced Ambipolar Conjugated Polymers Featuring Mild Glass Transition Temperatures Toward High-Performance Flexible Field-Effect Transistors.

机构信息

Beijing National Laboratory for Molecular Sciences, Organic Solids Laboratory, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China.

School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China.

出版信息

Adv Mater. 2018 Mar;30(9). doi: 10.1002/adma.201705286. Epub 2018 Jan 12.

Abstract

Conjugated polymers, which can be fabricated by simple processing techniques and possess excellent electrical performance, are key to the fabrication of flexible polymer field-effect transistors (PFETs) and integrated circuits. Herein, two ambipolar conjugated polymers based on (3E,7E)-3,7-bis(2-oxo-1H-pyrrolo[2,3-b]pyridin-3(2H)-ylidene)benzo[1,2-b:4,5-b']difuran-2,6(3H,7H)-dione and dithienylbenzothiadiazole units, namely PNBDOPV-DTBT and PNBDOPV-DTF2BT, are developed. Both copolymers possess almost planar conjugated backbone conformations and suitable highest occupied molecular orbital (HOMO)/lowest unoccupied molecular orbital (LUMO) energy levels (-5.64/-4.38 eV for PNBDOPV-DTBT and -5.79/-4.48 eV for PNBDOPV-DTF2BT). Note that PNBDOPV-DTBT has a glass transition temperature (140 °C) lower than the deformation temperature of polyethylene terephthalate (PET), meaning well-ordered molecular packing can be obtained on PET substrate before its deformation in mild thermal annealing process. Flexible PFETs based on PNBDOPV-DTBT fabricated on PET substrates exhibit high and well-balanced hole/electron mobilities of 4.68/4.72 cm V s under ambient conditions. After the further modification of Au source/drain electrodes with 1-octanethiol self-assembled monolayers, impressively high and well-balanced hole/electron mobilities up to 5.97/7.07 cm V s are achieved in the flexible PFETs. Meanwhile, flexible complementary-like inverters based on PNBDOPV-DTBT on PET substrate also afford a much high gain of 148. The device performances of both the PFETs and inverters are among the highest values for ambipolar conjugated polymers reported to date.

摘要

共轭聚合物可以通过简单的加工技术制备,并具有优异的电性能,是制备柔性聚合物场效应晶体管(PFET)和集成电路的关键。本文开发了两种基于(3E,7E)-3,7-双(2-氧代-1H-吡咯并[2,3-b]吡嗪-3(2H)-亚基)苯并[1,2-b:4,5-b']二呋喃-2,6(3H,7H)-二酮和二噻吩基苯并噻二唑单元的双极共轭聚合物,即 PNBDOPV-DTBT 和 PNBDOPV-DTF2BT。这两种共聚物都具有近乎平面的共轭主链构象和合适的最高占据分子轨道(HOMO)/最低未占据分子轨道(LUMO)能级(-5.64/-4.38 eV 对于 PNBDOPV-DTBT 和-5.79/-4.48 eV 对于 PNBDOPV-DTF2BT)。值得注意的是,PNBDOPV-DTBT 的玻璃化转变温度(140°C)低于聚对苯二甲酸乙二醇酯(PET)的变形温度,这意味着在温和的热退火过程中,在 PET 基板上进行变形之前,可以获得有序的分子堆积。基于 PNBDOPV-DTBT 的在 PET 基板上制备的柔性 PFET 在环境条件下表现出高达 4.68/4.72 cm V s 的高且平衡的空穴/电子迁移率。在进一步用 1-辛硫醇自组装单层对 Au 源/漏电极进行修饰后,柔性 PFET 中可实现高达 5.97/7.07 cm V s 的高且平衡的空穴/电子迁移率。同时,基于 PNBDOPV-DTBT 的在 PET 基板上的柔性互补型逆变器也提供了高达 148 的高增益。PFET 和逆变器的器件性能均为迄今为止报道的双极共轭聚合物中最高值之一。

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