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抑制电荷耦合器件垂直拖影对近红外激光束质量因子(M)测量的影响。

Suppressing the influence of charge-coupled device vertical blooming on the measurement of laser beam quality factor (M) of a near-infrared laser.

作者信息

Meng Ling-Qiang, Ji Kun-Hao, Kong Qing-Qing, Han Zhi-Gang, Shen Hua, Zhu Ri-Hong

出版信息

Appl Opt. 2018 Jan 10;57(2):130-137. doi: 10.1364/AO.57.000130.

Abstract

In this paper, a new method, which is based on reconstructing the original intensity distribution of a laser with images captured by a charge-coupled device (CCD) in two orthogonal directions, is proposed for suppressing the influence of CCD vertical blooming on the measurement of the laser beam quality factor (M). A simplified theoretical model for the distribution of CCD blooming is also proposed. With the proposed method and model, the influence of CCD vertical blooming on the measurement of M is simulated. The experimental results demonstrate that the new method can be an effective means to measure the M of a near-infrared laser with a silicon CCD camera. The proposed method can be applied to a beam quality analyzer in order to suppress the influence of blooming on the measurement of M.

摘要

本文提出了一种新方法,该方法基于利用电荷耦合器件(CCD)在两个正交方向上捕获的图像来重建激光的原始强度分布,以抑制CCD垂直拖影对激光束质量因子(M)测量的影响。还提出了一个关于CCD拖影分布的简化理论模型。利用所提出的方法和模型,模拟了CCD垂直拖影对M测量的影响。实验结果表明,该新方法可以成为使用硅CCD相机测量近红外激光M的有效手段。所提出的方法可应用于光束质量分析仪,以抑制拖影对M测量的影响。

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