Liu Yang, Zhou Feng, Wang Yunzhe, Zhang Yin, Zhang Yunfeng, Zheng Hanyu, Shao Junfeng
Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China.
Beijing Blue Sky Innovation Center for Frontier Science, Beijing 100049, China.
Sensors (Basel). 2024 Jul 5;24(13):4380. doi: 10.3390/s24134380.
As the weak link in electro-optical imaging systems, photodetectors have always faced the threat of laser damage. In this paper, we experimentally investigated the damage mechanism of the photodetector induced by the out-of-band laser. The damage thresholds of the mid-infrared pulsed laser for Charge Coupled Device (CCD) and HgCdTe detectors were determined through damage experiments. The analysis of the damage phenomena and data for both CCD and HgCdTe detectors clearly demonstrated that out-of-band mid-infrared pulsed lasers could entirely incapacitate CCD and HgCdTe detectors. Our analysis of the damage process and data revealed that the primary mechanism of damage to CCD and HgCdTe detectors by mid-infrared pulsed lasers was primarily thermal. This study serves as a reference for further research on the mid-infrared pulsed laser damage mechanisms of CCD and HgCdTe detectors, as well as for laser protection and performance optimization in imaging systems.
作为电光成像系统中的薄弱环节，光电探测器一直面临着激光损伤的威胁。在本文中，我们通过实验研究了带外激光诱导光电探测器的损伤机制。通过损伤实验确定了中红外脉冲激光对电荷耦合器件（CCD）和碲镉汞探测器的损伤阈值。对CCD和碲镉汞探测器的损伤现象及数据的分析清楚地表明，带外中红外脉冲激光可使CCD和碲镉汞探测器完全失效。我们对损伤过程和数据的分析表明，中红外脉冲激光对CCD和碲镉汞探测器造成损伤的主要机制主要是热效应。本研究为进一步研究CCD和碲镉汞探测器的中红外脉冲激光损伤机制以及成像系统中的激光防护和性能优化提供了参考。
