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单层 PtSe 上的硅烯:通过 NH 插层实现从强到弱的结合。

Silicene on Monolayer PtSe: From Strong to Weak Binding via NH Intercalation.

机构信息

Physical Science and Engineering Division, King Abdullah University of Science and Technology , Thuwal 23955-6900, Saudi Arabia.

出版信息

ACS Appl Mater Interfaces. 2018 Jan 31;10(4):4266-4270. doi: 10.1021/acsami.7b17304. Epub 2018 Jan 16.

Abstract

We study the properties of silicene on monolayer PtSe by first-principles calculations and demonstrate a much stronger interlayer interaction than previously reported for silicene on other semiconducting substrates. This fact opens the possibility of a direct growth. A band gap of 165 meV results from inversion symmetry breaking and large spin-splittings in the valence and conduction bands from proximity to monolayer PtSe and its strong spin-orbit coupling. It is also shown that the interlayer interaction can be effectively reduced by intercalating NH molecules between silicene and monolayer PtSe without inducing charge transfer or defect states near the Fermi energy. A small NH diffusion barrier makes intercalation a viable experimental approach to control the interlayer interaction.

摘要

我们通过第一性原理计算研究了单层 PtSe 上硅烯的性质,并证明了它与之前报道的其他半导体衬底上的硅烯相比具有更强的层间相互作用。这一事实为直接生长开辟了可能性。由于反演对称性的破坏以及单层 PtSe 的临近和强自旋轨道耦合导致价带和导带中的大自旋分裂,产生了 165 meV 的带隙。研究还表明,通过在硅烯和单层 PtSe 之间插入 NH 分子,可以有效地降低层间相互作用,而不会在费米能级附近引起电荷转移或缺陷态。较小的 NH 扩散势垒使得插层成为一种可行的实验方法,可以控制层间相互作用。

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