Department of Chemistry, Purdue University , 560 Oval Drive, West Lafayette, Indiana 47907, United States.
Birck Nanotechnology Center, Purdue University , 1205 W State Street, West Lafayette, Indiana 47906, United States.
ACS Appl Mater Interfaces. 2018 Feb 7;10(5):4904-4909. doi: 10.1021/acsami.7b19847. Epub 2018 Jan 24.
Complementary semiconducting polymer blends (c-SPBs) have been proposed and tested to achieve melt-processed high-performance organic field-effect transistors (OFETs). Prior to this study, melt processing requires temperatures as high as 180 °C. To implement this technique into low-cost and large-area thin-film manufacturing for flexible organic electronics, semiconducting materials meltable at temperatures tolerable by ubiquitous plastic substrates are still needed. We report here the design and melt processing of a c-SPB consisting of a matrix polymer (DPP-C5) and its fully conjugated analogue. By utilizing a siloxane-terminated alkyl chain and a branched alkyl chain as solubilizing groups, the matrix polymer DPP-C5 presents a melting temperature of 115 °C. The resulting c-SPB containing as low as 5% of the fully conjugated polymer could be melt-processed at 130 °C. The obtained OFET devices exhibit hole mobility approaching 1.0 cm/(V s), threshold voltages below 5 V, and I/I around 10. This combination of efficient charge-carrier transport and considerably low processing temperatures bode well for melt processing of semiconducting polymer-based organic electronics.
互补半导体聚合物共混物（c-SPBs）已被提出并测试，以实现可熔融加工的高性能有机场效应晶体管（OFETs）。在此之前，熔融加工需要高达 180°C 的温度。为了将这项技术应用于低成本和大面积的薄膜制造，用于柔性有机电子，仍然需要可在通用塑料衬底耐受的温度下熔融的半导体材料。我们在此报告了由基质聚合物（DPP-C5）及其完全共轭类似物组成的 c-SPB 的设计和熔融加工。通过利用硅氧烷封端的烷基链和支化的烷基链作为增溶基团，基质聚合物 DPP-C5 的熔点为 115°C。含有低至 5%的完全共轭聚合物的所得 c-SPB 可以在 130°C 下熔融加工。获得的 OFET 器件表现出接近 1.0 cm/（V s）的空穴迁移率，低于 5 V 的阈值电压和约 10 的 I/I。这种高效电荷载流子输运和相当低的处理温度的结合，为基于半导体聚合物的有机电子的熔融加工提供了良好的前景。
