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简单半赫斯勒拓扑绝缘体中三重点费米子的预测

Prediction of Triple Point Fermions in Simple Half-Heusler Topological Insulators.

作者信息

Yang Hao, Yu Jiabin, Parkin Stuart S P, Felser Claudia, Liu Chao-Xing, Yan Binghai

机构信息

Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany.

Department of Physics, Pennsylvania State University, University Park, Pennsylvania 16802, USA.

出版信息

Phys Rev Lett. 2017 Sep 29;119(13):136401. doi: 10.1103/PhysRevLett.119.136401. Epub 2017 Sep 28.

Abstract

We predict the existence of triple point fermions in the band structure of several half-Heusler topological insulators by ab initio calculations and the Kane model. We find that many half-Heusler compounds exhibit multiple triple points along four independent C_{3} axes, through which the doubly degenerate conduction bands and the nondegenerate valence band cross each other linearly nearby the Fermi energy. When projected from the bulk to the (111) surface, most of these triple points are located far away from the surface Γ[over ¯] point, as distinct from previously reported triple point fermion candidates. These isolated triple points give rise to Fermi arcs on the surface, that can be readily detected by photoemission spectroscopy or scanning tunneling spectroscopy.

摘要

我们通过从头算计算和凯恩模型预测了几种半赫斯勒拓扑绝缘体的能带结构中存在三重简并费米子。我们发现,许多半赫斯勒化合物沿四个独立的C₃轴表现出多个三重简并点,通过这些点,双重简并的导带和非简并的价带在费米能量附近线性交叉。当从体材料投影到(111)表面时,这些三重简并点中的大多数远离表面Γ[上加一横]点,这与先前报道的三重简并费米子候选物不同。这些孤立的三重简并点在表面产生费米弧,可通过光电子能谱或扫描隧道能谱轻松检测到。

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