• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

用于光纤传感器覆盖层的耐碱低温原子层沉积氧化物

Alkali-resistant low-temperature atomic-layer-deposited oxides for optical fiber sensor overlays.

作者信息

Kosiel K, Dominik M, Ściślewska I, Kalisz M, Guziewicz M, Gołaszewska K, Niedziółka-Jonsson J, Bock W J, Śmietana M

机构信息

Instytut Technologii Elektronowej, Al. Lotników 32/46, 02-668 Warsaw, Poland.

出版信息

Nanotechnology. 2018 Apr 3;29(13):135602. doi: 10.1088/1361-6528/aaa9a3.

DOI:10.1088/1361-6528/aaa9a3
PMID:29355835
Abstract

This paper presents an investigation of properties of selected metallic oxides deposited at a low temperature (100 °C) by atomic layer deposition (ALD) technique, relating to their applicability as thin overlays for optical fiber sensors resistant in alkaline environments. Hafnium oxide (Hf O with y/x approx. 2.70), tantalum oxide (Ta O with y/x approx. 2.75) and zirconium oxide (Zr O with y/x approx. 2.07), which deposition was based, respectively, on tetrakis(ethylmethyl)hafnium, tantalum pentachloride and tetrakis(ethylmethyl)zirconium with deionized water, were tested as thin layers on planar Si (100) and glass substrates. Growth per cycle (GPC) in the ALD processes was 0.133-0.150 nm/cycle. Run-to-run GPC reproducibility of the ALD processes was best for Hf O (0.145 ± 0.001 nm/cycle) and the poorest for Ta O (0.133 ± 0.003 nm/cycle). Refractive indices n of the layers were 2.00-2.10 (at the wavelength λ = 632 nm), with negligible k value (at λ for 240-930 nm). The oxides examined by x-ray diffractometry proved to be amorphous, with only small addition of crystalline phases for the Zr O . The surfaces of the oxides had grainy but smooth topographies with root-mean square roughness ∼0.5 nm (at 10 × 10 μm area) according to atomic force microscopy. Ellipsometric measurements, by contrast, suggest rougher surfaces for the Zr O layers. The surfaces were also slightly rougher on the glass-based samples than on the Si-based ones. Nanohardness and Young modules were 4.90-8.64 GPa and 83.7-104.4 GPa, respectively. The tests of scratch resistance revealed better tribological properties for the Hf O and the Ta O than for the Zr O . The surfaces were hydrophilic, with wetting angles of 52.5°-62.9°. The planar oxides on Si, being resistive even to concentrated alkali (pH 14), proved to be significantly more alkali-resistive than AlO. The Ta O overlay was deposited on long-period grating sensor induced in optical fiber. Thanks to such an overlay the sensor proved to be long-lasting resistant when exposed to alkaline environment with a pH 9. Thereby, it also proved that it has a potential to be repeatedly reused as a regenerable optical fiber biosensor.

摘要

本文介绍了通过原子层沉积(ALD)技术在低温(100°C)下沉积的选定金属氧化物的性能研究,涉及它们作为碱性环境中耐光纤传感器薄涂层的适用性。分别以四(乙基甲基)铪、五氯化钽和四(乙基甲基)锆与去离子水为基础沉积的氧化铪(y/x约为2.70的HfO)、氧化钽(y/x约为2.75的TaO)和氧化锆(y/x约为2.07的ZrO),作为平面Si(100)和玻璃基板上的薄层进行了测试。ALD过程中的每循环生长(GPC)为0.133 - 0.150 nm/循环。ALD过程的逐次运行GPC再现性对于HfO最佳(0.145±0.001 nm/循环),对于TaO最差(0.133±0.003 nm/循环)。这些层的折射率n为2.00 - 2.10(在波长λ = 632 nm处),k值可忽略不计(在240 - 930 nm的λ处)。通过X射线衍射测定法检测的氧化物被证明是无定形的,ZrO仅添加了少量晶相。根据原子力显微镜,氧化物表面具有颗粒状但光滑的形貌,均方根粗糙度约为0.5 nm(在10×10μm区域)。相比之下,椭偏测量表明ZrO层的表面更粗糙。基于玻璃的样品表面也比基于Si的样品表面略粗糙。纳米硬度和杨氏模量分别为4.90 - 8.64 GPa和83.7 - 104.4 GPa。耐刮擦性测试表明,HfO和TaO的摩擦学性能优于ZrO。表面是亲水性的,润湿角为52.5° - 62.9°。Si上的平面氧化物即使对浓碱(pH 14)也具有抗性,被证明比AlO更耐碱。TaO涂层沉积在光纤中诱导的长周期光栅传感器上。由于这样的涂层,该传感器在暴露于pH 9的碱性环境时被证明具有持久的抗性。因此,它也被证明有潜力作为可再生光纤生物传感器被重复使用。

相似文献

1
Alkali-resistant low-temperature atomic-layer-deposited oxides for optical fiber sensor overlays.用于光纤传感器覆盖层的耐碱低温原子层沉积氧化物
Nanotechnology. 2018 Apr 3;29(13):135602. doi: 10.1088/1361-6528/aaa9a3.
2
Low-Temperature Atomic Layer Deposition of Highly Conformal Tin Nitride Thin Films for Energy Storage Devices.低温原子层沉积法制备用于储能器件的高保形氮化锡薄膜。
ACS Appl Mater Interfaces. 2019 Nov 20;11(46):43608-43621. doi: 10.1021/acsami.9b15790. Epub 2019 Nov 5.
3
Comparison of the Atomic Layer Deposition of Tantalum Oxide Thin Films Using Ta(NBu)(NEt), Ta(NBu)(NEt)Cp, and HO.使用 Ta(NBu)(NEt)、Ta(NBu)(NEt)Cp 和 HO 比较 TaOx 薄膜的原子层沉积。
ACS Appl Mater Interfaces. 2017 Jan 11;9(1):537-547. doi: 10.1021/acsami.6b11613. Epub 2016 Dec 20.
4
Surface characteristics and protein adsorption on combinatorial binary Ti-M (Cr, Al, Ni) and Al-M (Ta, Zr) library films.组合二元 Ti-M(Cr、Al、Ni)和 Al-M(Ta、Zr)库片表面特性及蛋白吸附
J Biomed Mater Res A. 2010 Feb;92(2):521-32. doi: 10.1002/jbm.a.32398.
5
Structural, Optical and Electrical Properties of HfO Thin Films Deposited at Low-Temperature Using Plasma-Enhanced Atomic Layer Deposition.采用等离子体增强原子层沉积法低温沉积的HfO薄膜的结构、光学和电学性质
Materials (Basel). 2020 Apr 25;13(9):2008. doi: 10.3390/ma13092008.
6
Selective Growth of Interface Layers from Reactions of Sc(MeCp)(Mepz) with Oxide Substrates.从 Sc(MeCp)(Mepz) 与氧化物衬底的反应中选择性生长界面层。
ACS Appl Mater Interfaces. 2018 Sep 26;10(38):32818-32827. doi: 10.1021/acsami.8b09264. Epub 2018 Sep 13.
7
Atomic Layer Deposition of Zirconium-Based High-k Metal Gate Oxide: Effect of Si Containing Zr Precursor.基于锆的高k金属栅氧化物的原子层沉积:含硅锆前驱体的影响。
J Nanosci Nanotechnol. 2015 Jan;15(1):382-5. doi: 10.1166/jnn.2015.8329.
8
The effect of ALD-grown Al₂O₃ on the refractive index sensitivity of CVD gold-coated optical fiber sensors.原子层沉积生长的Al₂O₃对化学气相沉积金涂覆光纤传感器折射率灵敏度的影响。
Nanotechnology. 2015 Oct 30;26(43):434002. doi: 10.1088/0957-4484/26/43/434002. Epub 2015 Oct 5.
9
Use of Mixed CH3-/HC(O)CH2CH2-Si(111) Functionality to Control Interfacial Chemical and Electronic Properties During the Atomic-Layer Deposition of Ultrathin Oxides on Si(111).在Si(111)上超薄氧化物的原子层沉积过程中,利用混合的CH3-/HC(O)CH2CH2-Si(111)官能团来控制界面化学和电子性质。
J Phys Chem Lett. 2015 Feb 19;6(4):722-6. doi: 10.1021/jz502542a. Epub 2015 Feb 6.
10
Tuning ignition and energy release properties of Zirconium powder by atomic layer deposited metal oxide coatings.通过原子层沉积金属氧化物涂层调节锆粉的点火和能量释放特性。
J Hazard Mater. 2019 Oct 15;378:120655. doi: 10.1016/j.jhazmat.2019.05.048. Epub 2019 May 22.

引用本文的文献

1
Local atomic order of the amorphous TaO thin films in relation to their chemical resistivity.非晶态TaO薄膜的局部原子排列与其化学电阻率的关系。
RSC Adv. 2019 Nov 4;9(61):35727-35734. doi: 10.1039/c9ra07318c. eCollection 2019 Oct 31.