Li Wenhao, Zhao Xiaolong, Zhi Yusong, Zhang Xuhui, Chen Zhengwei, Chu Xulong, Yang Hujiang, Wu Zhenping, Tang Weihua
Appl Opt. 2018 Jan 20;57(3):538-543. doi: 10.1364/AO.57.000538.
High-quality cerium-doped β-GaO (GaO:Ce) thin films could be achieved on (0001)α-AlO substrates using a pulsed-laser deposition method. The impact of dopant contents concentration on crystal structure, optical absorption, photoluminescence, and photoelectric properties has been intensively studied. X-ray diffraction analysis results have shown that GaO:Ce films are highly (2¯01) oriented, and the lattice spacing of the (4¯02) planes is sensitive to the Ce doping level. The prepared GaO:Ce films show a sharp absorption edge at about 250 nm, meaning a high transparency to deep ultraviolet (DUV) light. The photoluminescence results revealed that the emissions were in the violet-blue-green region, which are associated with the donor-acceptor transitions with the Ce and oxygen vacancies related defects. A simple DUV photodetector device with a metal-semiconductor-metal structure has also been fabricated based on GaO:Ce thin film. A distinct DUV photoresponse was obtained, suggesting a potential application in DUV photodetector devices.
采用脉冲激光沉积法，可在(0001)α -Al₂O₃衬底上制备出高质量的铈掺杂β -Ga₂O₃(Ga₂O₃:Ce)薄膜。深入研究了掺杂剂含量浓度对晶体结构、光吸收、光致发光和光电性能的影响。X射线衍射分析结果表明，Ga₂O₃:Ce薄膜具有高度的(2¯01)取向，(4¯02)平面的晶格间距对Ce掺杂水平敏感。制备的Ga₂O₃:Ce薄膜在约250 nm处呈现出尖锐的吸收边，这意味着对深紫外(DUV)光具有高透明度。光致发光结果表明，发射光位于紫 - 蓝 - 绿区域，这与与Ce和氧空位相关缺陷的施主 - 受主跃迁有关。基于Ga₂O₃:Ce薄膜还制备了一种具有金属 - 半导体 - 金属结构的简单深紫外光电探测器器件。获得了明显的深紫外光响应，表明其在深紫外光电探测器器件中具有潜在应用。
