Maier Hubert, Ziegler Johannes, Fischer Ralf, Kozlov Dmitriy, Kvon Ze Don, Mikhailov Nikolay, Dvoretsky Sergey A, Weiss Dieter
Institute of Experimental and Applied Physics, University of Regensburg, 93053, Regensburg, Germany.
A.V. Rzhanov Institute of Semiconductor Physics, 630090, Novosibirsk, Russia.
Nat Commun. 2018 Feb 5;9(1):584. doi: 10.1038/s41467-018-02964-z.
In the original version of this Article, the second and third sentences of the first paragraph of the "Gate voltage and antidot period dependencies" section of the Results originally incorrectly read "The characteristic evolution of the sheet resistance ρ=ρ (B=0) with V shown for three antidot samples and an unpatterned reference sample in Fig. 3a. The maxima of ρ, located between V~0.5 and 1 V, reflect the charge neutrality point (CNP), corresponding to an E position located slightly in the valence band (see band structure in Fig. 3b)." In the corrected version, "[Formula: see text]" is replaced by "[Formula: see text]", and "The maxima of [Formula: see text]" is replaced by "The maxima of [Formula: see text]".
在本文的原始版本中,结果部分“栅极电压和反点周期依赖性”一节第一段的第二和第三句话最初错误地表述为:“图3a展示了三个反点样品和一个未图案化参考样品的薄层电阻ρ = ρ(B = 0)随V的特征演变。ρ的最大值位于V ~ 0.5至1 V之间,反映了电荷中性点(CNP),对应于略位于价带中的E位置(见图3b中的能带结构)。”在修正版本中,“[公式:见正文]”被替换为“[公式:见正文]”,“[公式:见正文]的最大值”被替换为“[公式:见正文]的最大值”。