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不同表面氧含量的氧化石墨烯的合成:微波辐射辅助法

Synthesis of Graphite Oxide with Different Surface Oxygen Contents Assisted Microwave Radiation.

作者信息

Ibarra-Hernández Adriana, Vega-Rios Alejandro, Osuna Velia

机构信息

Centro de Investigación en Materiales Avanzados, S.C., Miguel de Cervantes No. 120, Chihuahua 31136, Chihuahua., Mexico.

Consejo Nacional de Ciencia y Tecnología (CONACYT)-Centro de Investigación en Materiales Avanzados, S.C., Miguel de Cervantes No. 120., Chihuahua 31136, Chihuahua., Mexico.

出版信息

Nanomaterials (Basel). 2018 Feb 13;8(2):106. doi: 10.3390/nano8020106.

Abstract

Graphite oxide is synthesized via oxidation reaction using oxidant compounds that have lattice defects by the incorporation of unlike functional groups. Herein, we report the synthesis of the graphite oxide with diverse surface oxygen content through three (B, C, D) different modified versions of the Hummers method assisted microwave radiation compared with the conventional graphite oxide sample obtained by Hummers method (A). These methods allow not only the production of graphite oxide but also reduced graphene oxide, without undergoing chemical, thermal, or mechanical reduction steps. The values obtained of C/O ratio were ~2, 3.4, and ~8.5 for methodologies C, B, and D, respectively, indicating the presence of graphite oxide and reduced graphene oxide, according to X-ray photoelectron spectroscopy. Raman spectroscopy of method D shows the fewest structural defects compared to the other methodologies. The results obtained suggest that the permanganate ion produces reducing species during graphite oxidation. The generation of these species is attributed to a reversible reaction between the permanganate ion with π electrons, ions, and radicals produced after treatment with microwave radiation.

摘要

氧化石墨烯是通过使用具有晶格缺陷的氧化剂化合物,通过引入不同的官能团进行氧化反应合成的。在此,我们报告了通过三种(B、C、D)不同改良版的哈默斯法辅助微波辐射合成具有不同表面氧含量的氧化石墨烯,并与通过哈默斯法获得的传统氧化石墨烯样品(A)进行比较。这些方法不仅可以生产氧化石墨烯,还可以生产还原氧化石墨烯,而无需经过化学、热或机械还原步骤。根据X射线光电子能谱,方法C、B和D获得的C/O比值分别约为2、3.4和8.5,表明存在氧化石墨烯和还原氧化石墨烯。与其他方法相比,方法D的拉曼光谱显示出最少的结构缺陷。所得结果表明,高锰酸根离子在石墨氧化过程中产生还原物种。这些物种的产生归因于高锰酸根离子与微波辐射处理后产生的π电子、离子和自由基之间的可逆反应。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9273/5853737/bec42ab98112/nanomaterials-08-00106-g001.jpg

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