Shen Lu, Zhang Lihua, Wang Kui, Miao Lijing, Lan Qiaofeng, Jiang Kemin, Lu Huanming, Li Ming, Li Yong, Shen Bin, Zheng Wenge
Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences (CAS) Ningbo Zhejiang province 315201 China
RSC Adv. 2018 May 10;8(31):17209-17217. doi: 10.1039/c8ra01486h. eCollection 2018 May 9.
The thermal exfoliation and reduction of graphite oxide (GO) is the most commonly used strategy for large-scale preparation of graphene, and the oxidation degree of GO would influence the chemical structure of prepared graphene, thereby affecting its final physical and chemical properties. In addition to serving as the precursor for synthesizing graphene, GO also possesses great potential for various important applications owing to its abundant oxygen-containing groups and hybrid electronic structure. Therefore, systematically studying the influencing factors on the oxidation degree of GO and clarifying the effect of oxidation degree on the corresponding graphene is particularly important. Herein, we have studied the effect of the lateral size of the original graphite on the oxidation degree of GO in order to control the oxidation degree of GO. GOs with different degrees of oxidation were synthesized using a modified Hummers method. The results of X-ray diffraction (XRD), X-ray photoelectron spectra (XPS) and Raman spectroscopy revealed that decreased lateral size of the original graphite would lead to increased oxidation degree of GO. Furthermore, the interlayer spacing of the GO samples achieved 0.9-1.0 nm, which indicated that the modified Hummers method could make well oxidized graphite. The corresponding reduced graphite oxide (rGO) was also prepared by low-temperature exfoliation of GO at 140 °C under ambient atmosphere. It was found that a larger lateral size of GO resulted in rGO with fewer oxygen-containing functional groups, but a smaller lateral size of graphite possessed a higher exfoliation degree with a larger specific surface area. More importantly, the relationship between binding energy ( ) of photoelectron of C atom in oxygen-containing groups and the number of oxygen-containing groups in GO and rGO samples was analyzed theoretically.
热剥离还原氧化石墨烯(GO)是大规模制备石墨烯最常用的策略,GO的氧化程度会影响所制备石墨烯的化学结构,进而影响其最终的物理和化学性质。除了作为合成石墨烯的前驱体,GO因其丰富的含氧基团和混合电子结构在各种重要应用中也具有巨大潜力。因此,系统研究影响GO氧化程度的因素并阐明氧化程度对相应石墨烯的影响尤为重要。在此,我们研究了原始石墨的横向尺寸对GO氧化程度的影响,以控制GO的氧化程度。采用改进的Hummers法合成了不同氧化程度的GO。X射线衍射(XRD)、X射线光电子能谱(XPS)和拉曼光谱结果表明,原始石墨横向尺寸减小会导致GO氧化程度增加。此外,GO样品的层间距达到0.9 - 1.0 nm,这表明改进的Hummers法可制备出氧化良好的石墨。通过在环境气氛下于140℃对GO进行低温剥离也制备了相应的还原氧化石墨烯(rGO)。发现较大横向尺寸的GO导致rGO含有的含氧官能团较少,但较小横向尺寸的石墨具有更高的剥离程度和更大的比表面积。更重要的是,从理论上分析了含氧基团中C原子光电子的结合能( )与GO和rGO样品中含氧基团数量之间的关系。