Wei Xuhui, Wang Shitan, Wang Can, Zhu Menglong, Zhao Yuan, Xie Haipeng, Niu Dongmei, Gao Yongli
Institute of Super-Microstructure and Ultrafast Process in Advanced Materials, School of Physics and Electronics, Central South University, Changsha, Hunan, 410083, P. R. China.
J Nanosci Nanotechnol. 2018 Jun 1;18(6):4332-4336. doi: 10.1166/jnn.2018.15044.
The interfacial electronic structure and morphology of nanofilm of 2,7-dioctyl[1]benzothieno[3,2-b]benzothiophene (C8-BTBT) on black phosphorus (BP) was investigated with photoemission spectroscopy (PES) and atomic force microscopy (AFM). The heterojunction of C8-BTBT/BP is a straddling one with a hole injection barrier of 1.41 eV and electron injection barrier of 2.43 eV from BP to C8-BTBT. There is a 0.18 eV interface dipole pointing from BP to C8-BTBT, which means a relative weak interaction of substrate BP and the C8-BTBT molecules. Volmer-Weber growth mode of C8-BTBT nanofilm on BP was confirmed and the C8-BTBT molecules adopt standing up configuration.
利用光电子能谱（PES）和原子力显微镜（AFM）研究了2,7-二辛基[1]苯并噻吩并[3,2-b]苯并噻吩（C8-BTBT）纳米薄膜在黑磷（BP）上的界面电子结构和形貌。C8-BTBT/BP异质结是一种跨越型异质结，从BP到C8-BTBT的空穴注入势垒为1.41 eV，电子注入势垒为2.43 eV。存在一个从BP指向C8-BTBT的0.18 eV界面偶极子，这意味着衬底BP与C8-BTBT分子之间的相互作用相对较弱。证实了C8-BTBT纳米薄膜在BP上的伏默-韦伯生长模式，且C8-BTBT分子采用直立构型。
