Lin Chih-Hung, Chang Shoou-Jinn, Hsueh Ting-Jen
Institute of Microelectronics and Department of Electrical Engineering National Cheng Kung University, Tainan 701, Taiwan, Republic of China.
National Nano Device Laboratories, Tainan-Based Science Park, Tainan 741, Taiwan, Republic of China.
J Nanosci Nanotechnol. 2018 Feb 1;18(2):1202-1206. doi: 10.1166/jnn.2018.13976.
The ZnO nanostructure environmental sensors were prepared via the three-dimensional through silicon via (3D-TSV) technique. For 3D-TSV, the diameter and length of the Si via were about 200 and 400 μm, respectively. For nitrogen oxide (NO), the measured responses were around ~12, ~16, and ~20% when the concentrations of the injected NO gas were 20, 40 and 60 ppm, respectively. For humidity and temperature sensing, the measured nanowire current increased logarithmically with increasing chamber temperature. The response to relative humidity increased with increasing temperature.
通过三维硅通孔（3D-TSV）技术制备了氧化锌纳米结构环境传感器。对于3D-TSV，硅通孔的直径和长度分别约为200μm和400μm。对于氮氧化物（NO），当注入的NO气体浓度分别为20、40和60ppm时，测量到的响应分别约为12%、16%和20%。对于湿度和温度传感，测量到的纳米线电流随腔室温度升高呈对数增加。对相对湿度的响应随温度升高而增加。
