Chen Yi-Hao, Chang Shoou-Jinn, Hsueh Ting-Jen
Opt Lett. 2015 Jun 15;40(12):2878-81. doi: 10.1364/OL.40.002878.
A ZnO-nanowire photodetector was prepared using three-dimensional through silicon via (TSV) technology. The diameter and depth of the Si via were about 80 μm and 170 μm, respectively. Cu uniformly filled in each TSV, whose average resistance was about 0.9 mΩ. For the three-dimensional ZnO-nanowire photodetector, the photocurrent increased rapidly with a time constant of about 1 s when ultraviolet excitation was applied. The on-off current ratio was about 10.
采用三维硅通孔（TSV）技术制备了一种氧化锌纳米线光电探测器。硅通孔的直径和深度分别约为80μm和170μm。铜均匀填充在每个TSV中，其平均电阻约为0.9 mΩ。对于三维氧化锌纳米线光电探测器，施加紫外激发时，光电流以约1 s的时间常数迅速增加。开/关电流比约为10。
